R6011KNX ROHM

R6011KNX Datasheet Nch 600V 11A Power MOSFET llOutline V 600V DSS R (Max.) 0.39 DS(on) TO-220FM I 11A D P 53W D llInner circuit llFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating RoHS compliant llPackaging specifications Code Packing C7 G Tube llApplication C7 Tube* Switching - (Blank) Bulk* *Package dimensions are different llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 I Continuous drain current 11 A D *2 I Pulsed drain current 33 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, single pulse 1.8 A AS *3 E Avalanche energy, single pulse 210 mJ AS Power dissipation (T = 25C) P 53 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2019 ROHM Co., Ltd. All rights reserved. 20190603 - Rev.003 R6011KNX Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 2.4 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS(th) DS D V = 10V, I = 3.8A GS D Static drain - source *5 R T = 25C - 0.34 0.39 DS(on) j on - state resistance T = 125C - 0.72 - j Gate resistance R f = 1MHz, open drain - 1.5 - G www.rohm.com 2/12 20190603 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.