DMN3012LFG Green 30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production Device BV R max DSS DS(ON) Low On-Resistance Q1 30V 12m V = 5V, I = 15A GS D Low Input Capacitance Q2 30V 6m V = 5V, I = 15A GS D Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high efficiency power management applications. Case: PowerDI 3333-8 Case Material: Molded Plastic, Green Molding Compound. UL DC-DC Converters Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.044 grams (Approximate) PowerDI3333-8 (Type D) Pin1 D1 S1/D2 D1 S1/D2 S2 G1 S1/D2 S1/D2 G2 Top View Top View Bottom View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN3012LFG-7 PowerDI3333-8 (Type D) 1000 / Tape & Reel DMN3012LFG-13 PowerDI3333-8 (Type D) 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMN3012LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Q2 Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 10 V GSS T = +25C 20 C A I D 16 T = +70C C Continuous Drain Current V = 5V GS T = +25C 10 A I A D 8 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 70 100 A DM Continuous Source-Drain Diode Current (Note 5) I 2.7 3.2 A S Avalanche Current (Note 6) L = 0.1mH 34 50 A IAS Avalanche Energy (Note 6) L = 0.1mH 58 125 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 2.2 C Total Power Dissipation W P D T = +70C 1.4 C Steady State 58 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 36 C/W Thermal Resistance, Junction to Case (Note 5) 9.5 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 2.1 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 10.5 12 m V = 5V, I = 15A DS(ON) GS D Forward Transfer Admittance Y 27 S V = 5V, I = 15A fs DS D Diode Forward Voltage V 1.0 V V = 0V, I = 15A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 650 850 C iss V = 15V, V = 0V, DS GS Output Capacitance 314 410 pF C oss f = 1.0MHz Reverse Transfer Capacitance 12 16 C rss V = 0V, V = 0V, f = DS GS Gate Resistance R 1.63 3.3 g 1.0MHz 4.7 Total Gate Charge (V = 4.5V) Q 6.1 GS g 0.91 Total Gate Charge at V Q TH g(TH) nC V = 15V, I = 15A DS D 1.6 Gate-Source Charge Q gs 0.9 Gate-Drain Charge Q gd 5.1 Turn-On Delay Time 7.7 tD(ON) Turn-On Rise Time 2.7 t V = 15V, V = 4.5V, R DD GS ns Turn-Off Delay Time 6.4 9.6 I = 15A, R = 2 t D G D(OFF) Turn-Off Fall Time 2.3 t F Reverse Recovery Time 24.5 ns t RR I = 15A, di/dt = 300A/s F Reverse Recovery Charge 8.3 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 10 DMN3012LFG April 2019 Diodes Incorporated www.diodes.com Document number: DS38967 Rev. 7 - 2