SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor V T 650 V DS jmax Feature R 0.6 DS(on) New revolutionary high voltage technology I 7.3 A D Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31 -3-111: Fully isolated package (2500 VAC 1 minute) Type Package Ordering Code Marking SPP07N60C3 PG-TO220-3 Q67040-S4400 07N60C3 SPI07N60C3 PG-TO262 Q67040-S4424 07N60C3 SPA07N60C3 PG-TO220FP 07N60C3 SP000216303 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 7.3 7.3 C 1) T = 100 C 4.6 4.6 C Pulsed drain current, t limited by T I 21.9 21.9 A p jmax D puls Avalanche energy, single pulse E 230 230 mJ AS I =5.5A,V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.5 0.5 AR AR jmax I =7.3A,V =50V D DD Avalanche current, repetitive t limited by T I 7.3 7.3 A AR jmax AR Gate source voltage static V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 83 32 W C tot Operating and storage temperature T , T -55...+150 C j stg 6) Reverse diode dv/dt dv/dt 15 V/ns Page 1 Rev. 3.2 2009-11-27 Rev. 3.3 Page 1 2018-02-13SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 7.3 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1.5 K/W Thermal resistance, junction - case thJC - - 3.9 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, wavesoldering T sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA - - V Drain-source breakdown voltage 600 (BR)DSS GS D V =0V, I =7.3A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =350A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =600V,V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.5 1 j T =150C - - 100 j V =30V,V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =4.6A Drain-source on-state resistance R GS D DS(on) T =25C - 0.54 0.6 j T =150C - 1.46 - j R f=1MHz, open drain - 0.8 - Gate input resistance G Page 2 Rev. 3.2 2009-11-27 Rev. 3.3 Page 2 2018-02-13