TM HiPerRF V = 500V IXFH21N50F DSS I = 21A Power MOSFETs IXFT21N50F D25 R 250m F-Class: MegaHertz Switching DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g Intrinsic R , High dV/dt, Low t TO-247 (IXFH) g rr Symbol Test Conditions Maximum Ratings TAB V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 20 V GSS TO-268 (IXFT) V Transient 30 V GSM I T = 25C21A D25 C I T = 25C, Pulse Width Limited by T 84 A DM C JM G I T = 25C21A S AR C E T = 25C 1.5 J TAB AS C dV/dt I I , di/dt < 100A/ s, V V 10 V/ns S DM DD DSS G = Gate D = Drain T 150C, R = 2 S = Source TAB = Drain J G P T = 25C 300 W D C Features T -55 ... +150 C J T 150 C z JM RF capable MOSFETs z Double metal process for low gate T -55 ... +150 C stg resistance T Maximum Lead Temperature for Soldering 300 C z L Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) T Plastic Body for 10s 260 C SOLD rated M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. z d Low package inductance z Fast intrinsic rectifier Weight TO-247 6 g TO-268 4 g Applications z DC-DC converters z Switched-mode and resonant-mode Symbol Test Conditions Characteristic Values power supplies, >500kHz switching z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J DC choppers z 13.5 MHz industrial applications BV V = 0V, I = 1mA 500 V DSS GS D z Pulse generation V V = V , I = 4mA 3.0 5.5 V z GS(th) DS GS D Laser drivers z RF amplifiers I V = 20V, V = 0V 100 nA GSS GS DS Advantages I V = V 50 A DSS DS DSS V = 0V T = 125C 1.5 mA GS J z Space savings R V = 10V, I = 0.5 I , Note 1 250 m z DS(on) GS D D25 High power density 2002 IXYS CORPORATION, All Rights Reserved DS98884(01/02)IXFH21N50F IXFT21N50F Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. TO-247 (IXFH) Outline J g V = 10V, I = 0.5 I , Note 1 12 17 S fs DS D D25 C 2600 pF iss C V = 0V, V = 25V, f = 1MHz 470 pF oss GS DS P C 160 pF rss t 16 ns d(on) Resistive Switching Times t 12 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 36 ns d(off) R = 2 (External) G t 7.7 ns e f Dim. Millimeter Inches Q 77 nC g(on) Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 0.5 I 21 nC A 4.7 5.3 .185 .209 gs GS DS DSS D D25 A 2.2 2.54 .087 .102 1 Q 40 nC gd A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 R 0.42 C/W thJC b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 R (TO-247) 0.21 C/W 2 thCS C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode Characteristic Values L1 4.50 .177 T = 25C Unless Otherwise Specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 21 A S GS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 84 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr TO-268 Outline I = 21A, -di/dt = 100A/s F Q 1.2 C RM V = 100V, V = 0V R GS I 10 A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % Min Recommended Footprint IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537