X-On Electronics has gained recognition as a prominent supplier of R6504KNJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6504KNJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6504KNJTL ROHM

R6504KNJTL electronic component of ROHM
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See Product Specifications
Part No.R6504KNJTL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 650 V 4A (Tc) 58W (Tc) Surface Mount LPTS
Datasheet: R6504KNJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.8782 ea
Line Total: USD 2.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.4722

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 2.9981
10 : USD 2.5826
100 : USD 2.076
500 : USD 1.7057

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 2.9981
10 : USD 2.5826
100 : USD 2.076
500 : USD 1.7057

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 2.8782
10 : USD 2.3068
100 : USD 1.8336
500 : USD 1.495
1000 : USD 1.4625
5000 : USD 1.43

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.1489
2000 : USD 1.104

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6504KNJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6504KNJTL and other electronic components in the MOSFETs category and beyond.

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R6504KNJ Datasheet Nch 650V 4A Power MOSFET llOutline LPT(S) V 650V DSS R (Max.) 1.050 DS(on) I 4.0A D P 58W D llFeatures llInner circuit 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Packing Embossed Tape Packing code TL Marking R6504KNJ Basic ordering unit (pcs) 1000 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 650 V DSS *1 Continuous drain current (T = 25C) I 4.0 A c D *2 I Pulsed drain current 12 A DP Static 20 V Gate - Source voltage V GSS AC (f 1Hz) 30 V Avalanche current, single pulse I 0.8 A AS *3 E Avalanche energy, single pulse 34.8 mJ AS Power dissipation (T = 25C) P 58 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20171004 - Rev.002 R6504KNJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 2.2 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 130A Gate threshold voltage 3 - 5 V GS(th) DS GS D V = 10V, I = 1.5A GS D Static drain - source *6 R T = 25C - 0.955 1.050 DS(on) j on - state resistance T = 125C - - - j Gate resistance R f = 1MHz, open drain - 3.3 - G www.rohm.com 2/11 20171004 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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