R6020ANX Datasheet Nch 600V 20A Power MOSFET llOutline V 600V DSS R (Max.) 0.22 DS(on) TO-220FM I 20A D P 85W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed to GSS be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Packing Bulk Reel size (mm) - llApplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500 Taping code - Marking R6020ANX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 T = 25C I 20 A C D Continuous drain current *1 T = 100C I 9.7 A C D *2 I Pulsed drain current 80 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 10 A AS *3 E Avalanche energy, single pulse 26.7 mJ AS *4 E Avalanche energy, repetitive 3.5 mJ AR Power dissipation (T = 25C) P 85 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg Reverse diode dv/dt dv/dt 15 V/ns www.rohm.com 1/13 2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.003 Not Recommended for New Designs R6020ANX Datasheet llAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 20A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.47 /W thJC Thermal resistance, junction - ambient R - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 20A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS Zero gate voltage T = 25C I - 0.1 100 A DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 2.5 - 4.5 V GS(th) DS D V = 10V, I = 10A GS D Static drain - source *6 R T = 25C - 0.17 0.22 j DS(on) on - state resistance T = 125C - 0.36 - j R Gate resistance f = 1MHz, open drain - 13.8 - G www.rohm.com 2/13 2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.003 Not Recommended for New Designs