X-On Electronics has gained recognition as a prominent supplier of R6030ENX MOSFET across the USA, India, Europe, Australia, and various other global locations. R6030ENX MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

R6030ENX ROHM

R6030ENX electronic component of ROHM
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See Product Specifications
Part No.R6030ENX
Manufacturer: ROHM
Category: MOSFET
Description: N-Channel 600 V 30A (Tc) 40W (Tc) Through Hole TO-220FM
Datasheet: R6030ENX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.6225 ea
Line Total: USD 3.62

Availability - 481
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
481
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 3.6225
10 : USD 3.565
25 : USD 3.45
1000 : USD 3.243
2500 : USD 3.151
5000 : USD 3.036

47
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 23
Multiples : 1
23 : USD 4.4732
25 : USD 4.281

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R6030ENX from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6030ENX and other electronic components in the MOSFET category and beyond.

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R6030ENX Datasheet Nch 600V 30A Power MOSFET llOutline V 600V DSS R (Max.) 0.130 DS(on) TO-220FM I 30A D P 86W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Code Packing C7 G Tube llApplication C7 Tube* Switching - (Blank) Bulk* *Package dimensions are different llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 I Continuous drain current 30 A D *2 Pulsed drain current I 80 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, repetitive 5.2 A AS *3 Avalanche energy, single pulse E 636 mJ AS *3 E Avalanche energy, repetitive 0.96 mJ AS Power dissipation (T = 25C) P 86 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2019 ROHM Co., Ltd. All rights reserved. 20200203 - Rev.003 R6030ENX Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - case - - 1.5 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 14.5A GS D Static drain - source *5 R T = 25C - 0.115 0.130 DS(on) j on - state resistance T = 125C - 0.255 - j R Gate resistance f =1MHz, open drain - 3.6 - G www.rohm.com 2/12 20200203 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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