R6030ENZ Nch 600V 30A Power MOSFET Data Sheet l Outline V 600V DSS TO-3PF R (Max.) 0.130W DS(on) I 30A D (1) (2) P 120W (3) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 20V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - Tape width (mm) - lApplication Type Quantity (pcs) 360 Switching Power Supply Taping code C8 Marking R6030ENZ lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 30 A c D Continuous drain current *1 T = 100C A I 16.3 c D *2 Pulsed drain current I 80 A D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 636 mJ E AS *3 Avalanche energy, repetitive E 0.96 mJ AR I Avalanche current, repetitive 5.2 A AR Power dissipation (T = 25C) P 120 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *4 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12 Not Recommended for New DesignsData Sheet R6030ENZ lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V DS Drain - Source voltage slope dv/dt 50 V/ns T = 25C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.04 C/W thJC Thermal resistance, junction - ambient R - - 40 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 mA DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2 - 4 V GS (th) DS D V = 10V, I = 14.5A GS D Static drain - source *5 T = 25C R - 0.115 0.130 W j DS(on) on - state resistance T = 125C - 0.255 - j R Gate input resistance f = 1MHz, open drain - 3.6 - W G www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12 Not Recommended for New Designs