Data Sheet 10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 <SOT-428> 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 4) Drive circuits can be simple. (1) (2) (3) 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping Type Code TL 1 Basic ordering unit (pieces) 2500 RCD080N25 (1) Gate (1) (2) (3) (2) Drain Absolute maximum ratings (Ta = 25 C) (3) Source 1 BODY DIODE Parameter Symbol Limits Unit Drain-source voltage V 250 V DSS Gate-source voltage V 30 V GSS Continuous I *3 8A D Drain current *1 Pulsed I 32 A DP *3 Source current Continuous I 8A S (Body Diode) *1 Pulsed I 32 A SP Avalanche current I *2 4A AS Avalanche energy E *2 4.67 mJ AS *4 Power dissipation P 85 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum channel temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth (j-c) 1.46 C / W * T =25C C * Limited only by maximum channel temperature allowed. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 1/5 Not Recommended for New Designs 0.9 5.5 1.5 0.8Min. 1.5 2.5 9.5Data Sheet RCD080N25 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 250 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 10 AV =250V, V =0V DSS DS GS Gate threshold voltage V 3- 5 VV =10V, I =1mA GS (th) DS D Static drain-source on-state * R I =4A, V =10V - 225 300 m DS (on) D GS resistance * Forward transfer admittance l Y l 2.7 - - S V =10V, I =4A fs DS D Input capacitance C - 1440 - pF V =25V iss DS Output capacitance C - 80 - pF V =0V oss GS Reverse transfer capacitance C - 40 - pF f=1MHz rss Turn-on delay time t - 30 - ns V 125V, I =4A d(on) * DD D Rise time t - 40 - ns V =10V r * GS Turn-off delay time t - 40 - ns R =31.25 d(off) L * Fall time t - 15 - ns R =10 f * G Total gate charge Q - 25 - nC V 125V, I =8A g * DD D Gate-source charge Q - 10 - nC V =10V * gs GS Gate-drain charge Q -10 - nC gd * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =8A, V =0V SD s GS *Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 2/5 Not Recommended for New Designs