X-On Electronics has gained recognition as a prominent supplier of RCJ081N20TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ081N20TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCJ081N20TL ROHM

RCJ081N20TL electronic component of ROHM
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Part No.RCJ081N20TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 10V Drive Nch Power MOSFET
Datasheet: RCJ081N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.472 ea
Line Total: USD 1.47 
Availability - 950
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
950
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.472
10 : USD 1.135
100 : USD 0.8154
500 : USD 0.6566
1000 : USD 0.5762
2000 : USD 0.5267
5000 : USD 0.483
10000 : USD 0.4796

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RCJ081N20TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ081N20TL and other electronic components in the MOSFETs category and beyond.

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RCJ081N20 Nch 200V 8.0A Power MOSFET Datasheet l Outline (2) V 200V DSS LPT(S) (SC-83) R (Max.) 770mW DS(on) I 8.0A D (1) P 40W (3) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 24 Switching Power Supply Type Quantity (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ081N20 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 8.0 A c D Continuous drain current *1 T = 100C A I 4.3 c D *2 Pulsed drain current I 32 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 5.17 mJ E AS *3 Avalanche current I 4.0 A AR T = 25C P 40 W c D Power dissipation *4 P T = 25C 1.56 W D a T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCJ081N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 3.125 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage drain current I mA DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 4.0A - 550 770 GS D Static drain - source *5 V = 10V, I = 4.0A R mW GS D DS(on) on - state resistance - 1100 1540 T = 125C j g V = 10V, I = 4.0A Forward transfer admittance 1.0 2.0 - S fs DS D www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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