X-On Electronics has gained recognition as a prominent supplier of RCJ220N25TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ220N25TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCJ220N25TL ROHM

RCJ220N25TL electronic component of ROHM
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Part No.RCJ220N25TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 250V 22A Automotive 3-Pin(2+Tab) LPTS T/R
Datasheet: RCJ220N25TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.695 ea
Line Total: USD 2.7 
Availability - 744
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
744
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.695
10 : USD 2.057
100 : USD 1.551
500 : USD 1.397
1000 : USD 1.331
10000 : USD 1.32

97
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 81
Multiples : 1
81 : USD 1.9619

73
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 22
Multiples : 1
22 : USD 1.885
50 : USD 1.82

   
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Polarity
Drain-Source On-Volt
Number Of Elements
Package Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RCJ220N25TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ220N25TL and other electronic components in the MOSFETs category and beyond.

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RCJ220N25 Nch 250V 22A Power MOSFET Datasheet Outline (2) V 250V DSS LPT(S) (SC-83) R (Max.) 140m DS(on) I 22A D (1) P 166W (3) D Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain 2) Fast switching speed. 1 (3) Source 3) Drive circuits can be simple. 1 BODY DIODE 4) Parallel use is easy. (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Quantity (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ220N25 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 22 A c D Continuous drain current *1 T = 100C I 11.9 A c D *2 Pulsed drain current A I 88 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 36.8 mJ E AS *3 Avalanche current I 11 A AR T = 25C P 166 W c D Power dissipation *4 P 1.56 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCJ220N25 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 0.75 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current - -25 A DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3.0 - 5.0 V GS (th) DS D V = 10V, I = 11A - 105 140 GS D Static drain - source *5 V = 10V, I = 11A R m GS D DS(on) on - state resistance - 230 320 T = 125C j Forward transfer admittance g V = 10V, I = 11A 612 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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