X-On Electronics has gained recognition as a prominent supplier of RCX100N25 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCX100N25 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCX100N25 ROHM

RCX100N25 electronic component of ROHM
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See Product Specifications
Part No.RCX100N25
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 250V 10A MOSFET
Datasheet: RCX100N25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7365 ea
Line Total: USD 1.74 
Availability - 375
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
375
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7365
10 : USD 1.3455
100 : USD 1.0845
500 : USD 1.0419
10000 : USD 1.0166

194
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 76
Multiples : 1
76 : USD 1.4667
100 : USD 1.401

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Factory Pack Quantity :
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RCX100N25 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCX100N25 and other electronic components in the MOSFETs category and beyond.

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RCX100N25 Nch 250V 10A Power MOSFET Datasheet l Outline V 250V DSS TO-220FM R (Max.) 320mW DS(on) I 10A D (3) P (2) 40W D (1) l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX100N25 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 10 A c D Continuous drain current *1 T = 100C A I 5.4 c D *2 Pulsed drain current I 40 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 7.29 mJ E AS *3 Avalanche current I 5.0 A AR T = 25C P 40 W c D Power dissipation T = 25C P 2.23 W a D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCX100N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 3.125 C/W Thermal resistance, junction - case thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current - - 10 mA DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 5.0A - 245 320 GS D Static drain - source *4 V = 10V, I = 5.0A R mW GS D DS(on) on - state resistance - 455 640 T = 125C j Forward transfer admittance g V = 10V, I = 5.0A 2.7 5.4 - S fs DS D www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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