RCX100N25 Nch 250V 10A Power MOSFET Datasheet l Outline V 250V DSS TO-220FM R (Max.) 320mW DS(on) I 10A D (3) P (2) 40W D (1) l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX100N25 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 10 A c D Continuous drain current *1 T = 100C A I 5.4 c D *2 Pulsed drain current I 40 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 7.29 mJ E AS *3 Avalanche current I 5.0 A AR T = 25C P 40 W c D Power dissipation T = 25C P 2.23 W a D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCX100N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 3.125 C/W Thermal resistance, junction - case thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current - - 10 mA DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 5.0A - 245 320 GS D Static drain - source *4 V = 10V, I = 5.0A R mW GS D DS(on) on - state resistance - 455 640 T = 125C j Forward transfer admittance g V = 10V, I = 5.0A 2.7 5.4 - S fs DS D www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12