X-On Electronics has gained recognition as a prominent supplier of RCX120N20 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCX120N20 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCX120N20 ROHM

RCX120N20 electronic component of ROHM
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Part No.RCX120N20
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 200V 12A Automotive 3-Pin(3+Tab) TO-220FM Bulk
Datasheet: RCX120N20 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4035 ea
Line Total: USD 2.4 
Availability - 441
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
441
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.4035
10 : USD 2.001
100 : USD 1.5985
250 : USD 1.472
500 : USD 1.2535
1000 : USD 1.2075
2500 : USD 1.1845
5000 : USD 1.173

23
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 15
Multiples : 1
15 : USD 2.7138

194
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 109
Multiples : 1
109 : USD 1.7709

   
Manufacturer
Product Category
Packaging
Channel Mode
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Polarity
Drain-Source On-Volt
Package Type
Number Of Elements
Continuous Drain Current
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We are delighted to provide the RCX120N20 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCX120N20 and other electronic components in the MOSFETs category and beyond.

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RCX120N20 Nch 200V 12A Power MOSFE Datasheet l Outline V 200V DSS TO-220FM R (Max.) 325mW DS(on) I 12A D (3) (2) P 40W (1) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX120N20 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 200 V DSS *1 T = 25C I 12 A c D Continuous drain current *1 T = 100C A I 6.5 c D *2 Pulsed drain current I 48 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 11.6 mJ AS *3 Avalanche current I 6.0 A AR T = 25C P 40 W c D Power dissipation T = 25C P 2.23 W a D Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCX120N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.125 C/W thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage I mA DSS drain current V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 6.0A - 250 325 GS D Static drain - source *4 V = 10V, I = 6.0A R mW GS D DS(on) on - state resistance - 565 790 T = 125C j g V = 10V, I = 6.0A Forward transfer admittance 2.75 5.50 - S fs DS D www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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