X-On Electronics has gained recognition as a prominent supplier of RCX120N25 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCX120N25 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCX120N25 ROHM

RCX120N25 electronic component of ROHM
RCX120N25 ROHM
RCX120N25 MOSFETs
RCX120N25  Semiconductors

Images are for reference only
See Product Specifications
Part No. RCX120N25
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 250V 12A MOSFET
Datasheet: RCX120N25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.5875 ea
Line Total: USD 3.59 
Availability - 84
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
84
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ : 1
Multiples : 1
1 : USD 3.5875
10 : USD 1.728
100 : USD 1.309
500 : USD 1.298
1000 : USD 1.21

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the RCX120N25 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCX120N25 and other electronic components in the MOSFETs category and beyond.

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RCX120N25 Nch 250V 12A Power MOSFET Datasheet l Outline V 250V DSS TO-220FM R (Max.) 235mW DS(on) I 12A D (3) (2) P 40W (1) D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX120N25 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 T = 25C I 12 A c D Continuous drain current *1 T = 100C A I 6.5 c D *2 Pulsed drain current I 48 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 10.5 mJ AS *3 Avalanche current I 6.0 A AR T = 25C P 40 W c D Power dissipation T = 25C P 2.23 W D a Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 1/12Data Sheet RCX120N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.125 C/W thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage I mA DSS drain current V = 250V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 6.0A - 180 235 GS D Static drain - source *4 V = 10V, I = 6.0A R mW GS D DS(on) on - state resistance - 340 480 T = 125C j g V = 10V, I = 6.0A Forward transfer admittance 3.25 6.50 - S fs DS D www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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