DMN6013LFGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low R Ensures on state losses are minimized DS(ON) I max D BV R max DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C A density end products 13m V = 10V GS 10.3A 60V Occupies just 33% of the board area occupied by SO-8 enabling 18m V = 4.5V 8.8A GS smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Mechanical Data PPAP and is ideal for use in: Case: PowerDI 3333-8 Case Material: Molded Plastic,Gree Molding Compound, Motor Control UL Flammability Classification Rating 94V-0 DC to DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Reverse Polarity Protection Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN6013LFGQ-7 2,000/Tape & Reel PowerDI3333-8 DMN6013LFGQ-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN6013LFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 10.3 A A I D 8.3 TA = +70C Continuous Drain Current (Note 7) V = 10V GS T = +25C 45 C I A D 28 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 58.3 A DM Maximum Continuous Body Diode Forward Current (Note 7) I 3 A S Avalanche Current, L = 0.1mH I 33.3 A AS Avalanche Energy, L = 0.1mH E 56.8 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1 W P D Steady State 123 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t < 10s 69 Total Power Dissipation (Note 7) 2.1 W P D Steady State 60 Thermal Resistance, Junction to Ambient (Note 7) C/W R JA t < 10s 34 Total Power Dissipation (Note 7) 40 W PD Thermal Resistance, Junction to Case (Note 7) R 3.2 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current, T = +25C I 1 A V = 60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 1.8 3 V V = V , I = 250A GS(TH) DS GS D 9.3 13 VGS = 10V, ID = 10A Static Drain-Source On-Resistance m RDS(ON) 12.3 18 V = 4.5V, I = 8A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance pF C 2577 iss V = 30V, V = 0V, DS GS Output Capacitance pF C 162 oss f = 1MHz Reverse Transfer Capacitance pF C 132 rss 0.9 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 26.6 Total Gate Charge (V = 4.5V) Q nC GS g 55.4 Total Gate Charge (V = 10V) Q nC GS g V = 30V, I = 10A DS D 9.3 Gate-Source Charge Q nC gs 12.6 Gate-Drain Charge Q nC gd 6.2 Turn-On Delay Time ns t D(ON) Turn-On Rise Time 9.9 ns t V = 10V, V = 30V, R GS DS Turn-Off Delay Time 27.6 ns R = 3, I = 10A t G D D(OFF) Turn-Off Fall Time 11.7 ns t F Body Diode Reverse Recovery Time 9.4 ns t RR I = 10A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 18.6 nC RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6013LFGQ June 2018 Diodes Incorporated www.diodes.com Document number: DS38870 Rev. 2 - 2