DMC3025LDV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance I max D Device BV R max DSS DS(ON) T = +25C Low Input Capacitance C Fast Switching Speed 25m V = 10V 15A GS Q1 30V Low Input/Output Leakage 12.5A 35m VGS = 4.5V Complementary Pair MOSFET -15A 25m V = -10V GS Q2 -30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -12A 38m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: PowerDI3333-8 (Type UXC) resistance (R ) and yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding Compound. making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Analog Switch Weight: 0.072 grams (Approximate) Equivalent Circuit PowerDI3333-8 (Type UXC) D2 D1 D1 D1 D2 D2 G2 G1 S1 G1 S2 G2 PIN1 S2 S1 Top View Bottom View N-Channel MOSFET P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC3025LDV-7 PowerDI3333-8 (Type UXC) 2000/Tape & Reel DMC3025LDV-13 PowerDI3333-8 (Type UXC) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3025LDV Maximum Ratings Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 15 C Continuous Drain Current, V = 10V (Note 7) I A GS D State 12 T = +70C C Maximum Body Diode Forward Current (Note 6) I A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 55 A I DM Avalanche Current (L = 0.1mH) (Note 8) 14 A I AS Avalanche Energy (L = 0.1mH) (Note 8) 9.8 mJ E AS Maximum Ratings Q2 P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C -15 C Continuous Drain Current, V = -10V (Note 7) I A GS D State -12 T = +70C C Maximum Body Diode Forward Current (Note 6) I A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -45 A I DM Avalanche Current (L = 0.1mH) (Note 8) -22 A I AS Avalanche Energy (L = 0.1mH) (Note 8) 24 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.0 W P D Steady State 119 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 72 Total Power Dissipation (Note 6) 1.9 W P D Steady State 66 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 38 C/W Thermal Resistance, Junction to Case (Note 7) 15 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG PowerDI is a registered trademark of Diodes Incorporated. 2 of 10 DMC3025LDV July 2016 Diodes Incorporated www.diodes.com Document number: DS38937 Rev. 1 - 2