IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more Drain compact, lighter and cooler. Pin 2, Tab Gate Features Pin 1 Extremely low losses due to very low FOM Rdson*Qg and Eoss Source Very high commutation ruggedness Pin 3 Easy to use/drive JEDEC qualfied, Pb-free plating, Halogen free mold compound Qualified for standard grade applications Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor Lighting Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 400 m DS(on),max I 15.1 A D. Q 39 nC g.typ I 30 A D,pulse Eoss 400V 2.8 J Type / Ordering Code Package Marking Related Links IPD65R400CE PG-TO 252 65S400CE see Appendix A IPS65R400CE PG-TO 251 Final Data Sheet 1 Rev. 2.0, 2016-02-23650V CoolMOS CE Power Transistor IPD65R400CE, IPS65R400CE Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 14 Revision History 15 Trademarks . 15 Disclaimer 15 Final Data Sheet 2 Rev. 2.0, 2016-02-23