X-On Electronics has gained recognition as a prominent supplier of RCX160N20 MOSFET across the USA, India, Europe, Australia, and various other global locations. RCX160N20 MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RCX160N20 ROHM

RCX160N20 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RCX160N20
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET 10V Drive Nch MOSFET
Datasheet: RCX160N20 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.104 ea
Line Total: USD 1.1

Availability - 657
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 1.9857
10 : USD 1.936
30 : USD 1.9028
100 : USD 1.8716

657
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 1.104
10 : USD 0.9257
100 : USD 0.7532
500 : USD 0.6854
1000 : USD 0.6785

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Mounting
Operating Temp Range
Pin Count
Gate-Source Voltage Max
Package Type
Number Of Elements
Drain-Source On-Volt
Operating Temperature Classification
Continuous Drain Current
Power Dissipation
Rad Hardened
Polarity
Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RCX160N20 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCX160N20 and other electronic components in the MOSFET category and beyond.

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RCX160N20 Nch 200V 16A Power MOSFET Datasheet Outline V 200V DSS TO-220FM R (Max.) 180m DS(on) I 16A D (3) P (2) 43W D (1) Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate 1 (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Bulk Reel size (mm) - Application Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX160N20 Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 200 V DSS *1 T = 25C I 16 A c D Continuous drain current *1 T = 100C A I 8.7 c D *2 Pulsed drain current I 64 A D,pulse V V Gate - Source voltage 30 GSS *3 Avalanche energy, single pulse E 20.7 mJ AS *3 Avalanche current I 8.0 A AS T = 25C P 43 W c D Power dissipation T = 25C P 2.23 W a D T 150 C Junction temperature j T Range of storage temperature 55 to 150 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCX160N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.88 C/W thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS -- 10 T = 25C j Zero gate voltage I A DSS drain current V = 200V, V = 0V DS GS - - 100 = 125C T j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 8.0A - 135 180 GS D Static drain - source *4 V = 10V, I = 8.0A R m GS D DS(on) on - state resistance - 295 410 T = 125C j g V = 10V, I = 8.0A Forward transfer admittance 4.0 8.0 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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