X-On Electronics has gained recognition as a prominent supplier of RF4C050APTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RF4C050APTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RF4C050APTR ROHM

RF4C050APTR electronic component of ROHM
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See Product Specifications
Part No.RF4C050APTR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Pch -20V -10A Middle Power MOSFET
Datasheet: RF4C050APTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6313 ea
Line Total: USD 0.63 
Availability - 7022
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7022
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6313
10 : USD 0.6014
100 : USD 0.4117
500 : USD 0.3381
1000 : USD 0.3036
3000 : USD 0.276
6000 : USD 0.261
9000 : USD 0.2495

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RF4C050APTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF4C050APTR and other electronic components in the MOSFETs category and beyond.

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RF4C050AP Datasheet Pch -20V -10A Middle Power MOSFET llOutline DFN2020-8S V -20V DSS R (Max.) 26m DS(on) HUML2020L8 I 10A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Load switch Taping code TR Marking SJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 10 A D *1 I Pulsed drain current 20 A DP V Gate - Source voltage 0 -8 V GSS *2 P Power dissipation 2 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 RF4C050AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - 62.5 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -9.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -10 A DSS DS GS drain current I Gate - Source leakage current V = -8V, V = 0V - - -10 A GSS GS DS Gate threshold voltage V V = -10V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 1.8 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -5.0A - 18 26 GS D V = -2.5V, I = -2.5A - 22 31 GS D Static drain - source *3 R m DS(on) on - state resistance V = -1.8V, I = -2.5A - 27 45 GS D V = -1.5V, I = -1.0A - 32 65 GS D Forward Transfer *3 Y V = -10V, I = -5.0A 8 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 MOUNTED ON 40mm40mm Cu BOARD *3 Pulsed www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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