RF4E075AT Datasheet Pch -30V -7.5A Middle Power MOSFET llOutline HUML2020L8 V -30V DSS R (Max.) 21.7m DS(on) I 7.5A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Load switch Taping code TCR Marking JT llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS I Continuous drain current 7.5 A D *1 I Pulsed drain current 30 A D,pulse V Gate - Source voltage 20 V GSS *2 E Avalanche energy, single pulse 10.6 mJ AS *2 I Avalanche current -2.7 A AS *3 P Power dissipation 2 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150218 - Rev.001 RF4E075AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -7.5A - 16.7 21.7 GS D Static drain - source *4 R m DS(on) on - state resistance V = -4.5V, I = -7.5A - 24.4 31.7 GS D Forward Transfer *4 Y V = -5.0V, I = -7.5A 6.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Tr1: L 2mH, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *3 MOUNTED ON 40mm40mm Cu BOARD *4 Pulsed www.rohm.com 2/11 20150218 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.