X-On Electronics has gained recognition as a prominent supplier of RF4E075ATTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RF4E075ATTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RF4E075ATTCR ROHM

RF4E075ATTCR electronic component of ROHM
RF4E075ATTCR ROHM
RF4E075ATTCR MOSFETs
RF4E075ATTCR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RF4E075ATTCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET RF4E075AT which is High Power small mold package is suitable for Switching, Load switch.
Datasheet: RF4E075ATTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.76 ea
Line Total: USD 0.76 
Availability - 3920
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
169
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 0.6058
10 : USD 0.5326
30 : USD 0.4998
100 : USD 0.3117
500 : USD 0.2989
1000 : USD 0.2916

3920
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.76
10 : USD 0.645
100 : USD 0.3839
500 : USD 0.3113
1000 : USD 0.2827
3000 : USD 0.2519
6000 : USD 0.2365
9000 : USD 0.2266

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RF4E075ATTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF4E075ATTCR and other electronic components in the MOSFETs category and beyond.

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RF4E075AT Datasheet Pch -30V -7.5A Middle Power MOSFET llOutline HUML2020L8 V -30V DSS R (Max.) 21.7m DS(on) I 7.5A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Load switch Taping code TCR Marking JT llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS I Continuous drain current 7.5 A D *1 I Pulsed drain current 30 A D,pulse V Gate - Source voltage 20 V GSS *2 E Avalanche energy, single pulse 10.6 mJ AS *2 I Avalanche current -2.7 A AS *3 P Power dissipation 2 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150218 - Rev.001 RF4E075AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -7.5A - 16.7 21.7 GS D Static drain - source *4 R m DS(on) on - state resistance V = -4.5V, I = -7.5A - 24.4 31.7 GS D Forward Transfer *4 Y V = -5.0V, I = -7.5A 6.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Tr1: L 2mH, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *3 MOUNTED ON 40mm40mm Cu BOARD *4 Pulsed www.rohm.com 2/11 20150218 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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