X-On Electronics has gained recognition as a prominent supplier of RCJ450N20TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ450N20TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCJ450N20TL ROHM

RCJ450N20TL electronic component of ROHM
RCJ450N20TL ROHM
RCJ450N20TL MOSFETs
RCJ450N20TL  Semiconductors

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See Product Specifications
Part No. RCJ450N20TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 200V 45A Automotive 3-Pin(2+Tab) LPTS T/R
Datasheet: RCJ450N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3375 ea
Line Total: USD 3.34 
Availability - 806
Ship by Thu. 01 May to Mon. 05 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
806
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 3.3375
10 : USD 2.392
25 : USD 2.134
250 : USD 2.057
500 : USD 1.958
1000 : USD 1.738
2000 : USD 1.738
5000 : USD 1.716

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Technology
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Vgs - Gate-Source Voltage
Channel Mode
Mounting
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Number Of Elements
Continuous Drain Current
Package Type
Operating Temperature Classification
Drain-Source On-Volt
Power Dissipation
Rad Hardened
Type
Polarity
Gate-Source Voltage Max
Configuration
Series
Transistor Type
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the RCJ450N20TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ450N20TL and other electronic components in the MOSFETs category and beyond.

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Data Sheet 10V Drive Nch MOSFET RCJ450N20 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 3) Wide range of SOA. 5.08 2.7 (1) (2) (3) 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping Type Code TL 1 Quantity (pcs) 1000 RCJ450N20 (1) Gate (1) (2) (3) (2) Drain Absolute maximum ratings (Ta = 25 C) (3) Source 1 BODY DIODE Parameter Symbol Limits Unit Drain-source voltage V 200 V DSS Gate-source voltage V 30 V GSS *3 Continuous I 45 A D Drain current *1 Pulsed I 180 A DP *3 Source current Continuous I 45 A S *1 (Body Diode) Pulsed I 180 A SP *2 Avalanche current I 22.5 A AS *2 Avalanche energy E 160 mJ AS *4 Power dissipation P 211 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth (j-c) 0.59 C / W * T =25C C * Limited only by maximum temperature allowed. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/6 Not Recommended for New Designs 13.1 3.0 9.0 1.0 1.2Data Sheet RCJ450N20 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 200 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =200V, V =0V DSS DS GS Gate threshold voltage V 3.0 - 5.0 V V =10V, I =1mA GS (th) DS D Static drain-source on-state R I =22.5A, V =10V * -42 55 m DS (on) D GS resistance * Forward transfer admittance l Y l 17.0 - - S V =10V, I =22.5A fs DS D Input capacitance C - 4200 - pF V =25V iss DS Output capacitance C - 270 - pF V =0V oss GS Reverse transfer capacitance C - 160 - pF f=1MHz rss Turn-on delay time t - 52 - ns V 100V, I =22.5A d(on) * DD D Rise time t - 210 - ns V =10V r * GS Turn-off delay time t - 90 - ns R =4.4 d(off) L * Fall time t - 70 - ns R =10 f * G Total gate charge Q - 80 - nC V 100V, I =45A g * DD D Gate-source charge Q - 28 - nC V =10V * gs GS Gate-drain charge Q -28 - nC gd * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =45A, V =0V SD s GS *Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/6 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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