X-On Electronics has gained recognition as a prominent supplier of RCJ700N20TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ700N20TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCJ700N20TL ROHM

RCJ700N20TL electronic component of ROHM
RCJ700N20TL ROHM
RCJ700N20TL MOSFETs
RCJ700N20TL  Semiconductors

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See Product Specifications
Part No. RCJ700N20TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 10V DRIVE N-Ch MOSFET
Datasheet: RCJ700N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
24: USD 1.5432 ea
Line Total: USD 37.04 
Availability - 0
MOQ: 24  Multiples: 1
Pack Size: 1
Availability Price Quantity
143
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 5.05
10 : USD 3.476
25 : USD 3.267
100 : USD 2.948
250 : USD 2.761
500 : USD 2.717
1000 : USD 2.717
2000 : USD 2.706

   
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RCJ700N20TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ700N20TL and other electronic components in the MOSFETs category and beyond.

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RCJ700N20 Nch 200V 70A Power MOSFET Datasheet Outline V 200V DSS LPT(S) (SC-83) R (Max.) 42.7m DS(on) I 70A D (1) (2) P 297W (3) D Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate 1 (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Basic ordering unit (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ700N20 Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 200 V DSS *1 T = 25C I 70 A c D Continuous drain current *1 T = 100C A I 38 c D *2 Pulsed drain current I 140 A D,pulse V V Gate - Source voltage 30 GSS *3 Avalanche energy, single pulse E 396 mJ AS *3 Avalanche current I 35 A AR T = 25C P 297 W c D Power dissipation *4 P T = 25C 1.56 W D a T 150 C Junction temperature j T Range of storage temperature 55 to 150 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 1/12Data Sheet RCJ700N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.42 C/W thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS -- 25 T = 25C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 = 125C T j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 35A - 30.5 42.7 GS D Static drain - source *5 V = 10V, I = 35A R m GS D DS(on) on - state resistance - 62.0 87.0 T = 125C j g V = 10V, I = 35A Forward transfer admittance 15.3 30.6 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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