Data Sheet 10V Drive Nch MOSFET RCJ330N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2.54 0.4 2) Fast switching speed. 0.78 5.08 2.7 3) Gate-source voltage (1) (2) (3) V garanteed to be 30V . GSS 4) High package power. Application Inner circuit Switching 1 Packaging specifications Package Taping Type Code TL (1) Gate (1) (2) (3) Basic ordering unit (pieces) 1000 (2) Drain (3) Source RCJ330N25 1 BODY DIODE Absolute maximum ratings (Ta 25C) Parameter Symbol Limits Unit Drain-source voltage V 250 V DSS Gate-source voltage V 30 V GSS *3 Continuous I 33 A D Drain current *1 Pulsed I 132 A DP Continuous I *3 26 A Source current S *1 (Body Diode) Pulsed I 104 A SP *2 Avalanche current I 16.5 A AS *2 Avalanche energy E 74.8 mJ AS Power dissipation (Tc=25 C) P 211 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L500H, V =50V, Rg=25, starting Tch=25C DD *3 Limited only by maximum temperature allowed. Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth(j-c) 0.59 C / W * T =25C C www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 1/6 Not Recommended for New Designs 13.1 3.0 9.0 1.0 1.2Data Sheet RCJ330N25 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V =30V, V =0V GSS GS DS Drain-source breakdown voltage V 250 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =250V, V =0V DSS DS GS Gate threshold voltage V 3- 5 VV =10V, I =1mA GS (th) DS D Static drain-source on-state R * -77 105 m I =16.5A, V =10V DS (on) D GS resistance * Forward transfer admittance l Y l10 20 - S I =16.5A, V =10V fs D DS Input capacitance C - 4500 - pF V =25V iss DS Output capacitance C - 220 - pF V =0V oss GS Reverse transfer capacitance C - 130 - pF f=1MHz rss Turn-on delay time t - 50 - ns I =16.5A, V 125V * d(on) D DD Rise time t - 200 - ns V =10V r * GS Turn-off delay time t - 120 - ns R =7.6 * d(off) L Fall time t * - 140 - ns R =10 f G Total gate charge Q * - 80 - nC I =33A, g D Gate-source charge Q - 25 - nC V 125V * gs DD Gate-drain charge Q - 27 - nC V =10V * gd GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage V * - - 1.5 V I =33A, V =0V SD s GS *Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 2/6 Not Recommended for New Designs