X-On Electronics has gained recognition as a prominent supplier of RCJ100N25TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ100N25TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCJ100N25TL ROHM

RCJ100N25TL electronic component of ROHM
RCJ100N25TL ROHM
RCJ100N25TL MOSFETs
RCJ100N25TL  Semiconductors

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See Product Specifications
Part No. RCJ100N25TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 250V 10A Automotive 3-Pin(2+Tab) LPTS T/R
Datasheet: RCJ100N25TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8244 ea
Line Total: USD 1.82 
Availability - 1794
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1794
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 1.8244
10 : USD 1.4742
100 : USD 1.0037
250 : USD 1.0025
500 : USD 0.8431
1000 : USD 0.8293
2000 : USD 0.797
10000 : USD 0.7958

97
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 100
Multiples : 1
100 : USD 1.8059

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Polarity
Drain-Source On-Volt
Number Of Elements
Continuous Drain Current
Package Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RCJ100N25TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ100N25TL and other electronic components in the MOSFETs category and beyond.

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RCJ100N25 Nch 250V 10A Power MOSFET Datasheet Outline (2) V 250V DSS LPT(S) (SC-83) R (Max.) 320m DS(on) I 10A D (1) P 85W (3) D Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 1 (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Basic ordering unit (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ100N25 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 10 A c D Continuous drain current *1 T = 100C I 5.4 A c D *2 Pulsed drain current A I 40 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 7.29 mJ E AS *3 Avalanche current I 5.0 A AR T = 25C P 85 W c D Power dissipation *4 P 1.56 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 1/12Data Sheet RCJ100N25 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 1.46 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current -- 10 A DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3.0 - 5.0 V GS (th) DS D V = 10V, I = 5.0A - 245 320 GS D Static drain - source *5 V = 10V, I = 5.0A R m GS D DS(on) on - state resistance - 520 730 T = 125C j Forward transfer admittance g V = 10V, I = 5.0A 2.7 5.4 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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