X-On Electronics has gained recognition as a prominent supplier of RCJ120N20TL MOSFET across the USA, India, Europe, Australia, and various other global locations. RCJ120N20TL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RCJ120N20TL ROHM

RCJ120N20TL electronic component of ROHM
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See Product Specifications
Part No.RCJ120N20TL
Manufacturer: ROHM
Category: MOSFET
Description: Trans MOSFET N-CH 200V 12A Automotive 3-Pin(2+Tab) LPTS T/R
Datasheet: RCJ120N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2679 ea
Line Total: USD 1.27

Availability - 646
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
646
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 1.2679
10 : USD 1.0432
100 : USD 0.8428
500 : USD 0.7342
1000 : USD 0.6146
2000 : USD 0.5881
5000 : USD 0.5881
10000 : USD 0.5651
25000 : USD 0.5639

68
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 63
Multiples : 1
63 : USD 0.6843

873
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 143
Multiples : 1
143 : USD 0.7824
250 : USD 0.751
500 : USD 0.7238

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Polarity
Drain-Source On-Volt
Number Of Elements
Package Type
Continuous Drain Current
Gate-Source Voltage Max
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RCJ120N20TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ120N20TL and other electronic components in the MOSFET category and beyond.

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RCJ120N20 Nch 200V 12A Power MOSFET Datasheet Outline (2) V 200V DSS LPT(S) (SC-83) R (Max.) 325m DS(on) I 12A D (1) P (3) 52W D Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 1 (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Basic ordering unit (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ120N20 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 12 A c D Continuous drain current *1 T = 100C I 6.5 A c D *2 Pulsed drain current A I 48 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 11.6 mJ E AS *3 Avalanche current I 6.0 A AR T = 25C P 52 W c D Power dissipation *4 P 1.56 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 1/12Data Sheet RCJ120N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 2.36 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - -10 T = 25 C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 6.0A - 250 325 GS D Static drain - source *5 V = 10V, I = 6.0A R m GS D DS(on) on - state resistance - 565 790 T = 125C j g V = 10V, I = 6.0A Forward transfer admittance 2.75 5.50 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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