X-On Electronics has gained recognition as a prominent supplier of BUK7Y08-40B,115 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK7Y08-40B,115 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK7Y08-40B,115 Nexperia

BUK7Y08-40B,115 electronic component of Nexperia
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Part No.BUK7Y08-40B,115
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-CH TRENCHMOS STD LVL FET
Datasheet: BUK7Y08-40B,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.925 ea
Line Total: USD 2.92

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
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0 - WHS 1


Ships to you between
Wed. 12 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 1.7456
10 : USD 1.7031
30 : USD 1.6753
100 : USD 1.6477

0 - WHS 2


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 2.925
10 : USD 1.0992
100 : USD 0.8235
500 : USD 0.6797
1000 : USD 0.5438
1500 : USD 0.5037

0 - WHS 3


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 15
Multiples : 1
15 : USD 2.4304

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Transistor Type
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BUK7Y08-40B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --40 V DS j j voltage 1 I drain current V =10V T =25C --75 A D GS mb see Figure 4 see Figure 1 P total power T = 25 C see Figure 2 --105W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 68m DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13 Avalanche ruggedness E non-repetitive I =75A V 40 V --146mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =32V -14.7-nC GD D DS V = 10 V see Figure 14 GS 1 Continuous current is limited by package.BUK7Y08-40B Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y08-40B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK7Y08-40B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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