X-On Electronics has gained recognition as a prominent supplier of IPB180N10S403ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB180N10S403ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB180N10S403ATMA1 Infineon

IPB180N10S403ATMA1 electronic component of Infineon
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Part No.IPB180N10S403ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-CHANNEL_100+
Datasheet: IPB180N10S403ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.8433 ea
Line Total: USD 6.84 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 5.0282
10 : USD 4.4372
30 : USD 4.0768
100 : USD 3.5907

   
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We are delighted to provide the IPB180N10S403ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB180N10S403ATMA1 and other electronic components in the MOSFETs category and beyond.

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The IPB180N10S403ATMA1 is a MOSFET N-Channel_100+ transistor manufactured by Infineon Technologies AG. It is a Power MOSFET module, designed for use in various high power electronic circuits. This component is an enhanced N-channel power device with higher breakdown voltage, higher current-carrying capacity, and lower on-resistance. It has an optimized drain-source dV/dt and gate-source dV/dt to optimize switching performance. The module can operate at frequencies up to 17MHz, and features integrated ESD protection diodes for reliable and safe operation. Additionally, additional features such as temperature protection and gate-source clamping make the IPB180N10S403ATMA1 an excellent choice for applications that require robust operation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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