X-On Electronics has gained recognition as a prominent supplier of RCD100N20TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCD100N20TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCD100N20TL ROHM

RCD100N20TL electronic component of ROHM
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Part No.RCD100N20TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 200V 10A Automotive 3-Pin(2+Tab) CPT T/R
Datasheet: RCD100N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
38: USD 1.0725 ea
Line Total: USD 40.76 
Availability - 1669
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 38  Multiples: 1
Pack Size: 1
Availability Price Quantity
46
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 48
Multiples : 1
48 : USD 2.0415

2425
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 95
Multiples : 1
95 : USD 1.18
100 : USD 1.1272
250 : USD 1.082
500 : USD 1.043
1000 : USD 1.0089
2500 : USD 0.9792

1669
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 38
Multiples : 1
38 : USD 1.0725
50 : USD 0.9442
100 : USD 0.8287
200 : USD 0.793
500 : USD 0.7492
1000 : USD 0.7102

   
Manufacturer
Product Category
Packaging
Channel Mode
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Polarity
Drain-Source On-Volt
Package Type
Number Of Elements
Continuous Drain Current
Power Dissipation
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We are delighted to provide the RCD100N20TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCD100N20TL and other electronic components in the MOSFETs category and beyond.

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RCD100N20 Nch 200V 10A Power MOSFET Data Sheet l Outline V 200V DSS CPT3 (SC-63) R (Max.) 182mW DS(on) <SOT-428> I 10A D (1) (2) P (3) 20W D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking C10N20 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 200 V DSS *1 T = 25C I 10 A c D Continuous drain current *1 T = 100C A I 5.4 c D *2 Pulsed drain current I 40 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 7.35 mJ AS *3 Avalanche current I 5.0 A AS T = 25C P 20 W c D Power dissipation *4 P T = 25C 0.85 W D a Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 1/12Data Sheet RCD100N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 6.25 C/W thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage I mA DSS drain current V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 5.0A - 140 182 GS D Static drain - source *5 V = 10V, I = 5.0A R mW GS D DS(on) on - state resistance - 280 365 T = 125C j g V = 10V, I = 5.0A Forward transfer admittance 2.1 4.2 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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