X-On Electronics has gained recognition as a prominent supplier of RCJ050N25TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ050N25TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCJ050N25TL ROHM

RCJ050N25TL electronic component of ROHM
RCJ050N25TL ROHM
RCJ050N25TL MOSFETs
RCJ050N25TL  Semiconductors

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See Product Specifications
Part No. RCJ050N25TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 250V 5A Automotive 3-Pin(2+Tab) LPTS T/R
Datasheet: RCJ050N25TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9852 ea
Line Total: USD 0.99 
Availability - 720
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
720
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.9852
10 : USD 0.8154
100 : USD 0.6537
500 : USD 0.5694
1000 : USD 0.4932
2000 : USD 0.4551
5000 : USD 0.4435
10000 : USD 0.4366

771
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 93
Multiples : 1
93 : USD 0.7321
109 : USD 0.6279
200 : USD 0.6263
500 : USD 0.6195

64
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 66
Multiples : 1
66 : USD 1.3511

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RCJ050N25TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ050N25TL and other electronic components in the MOSFETs category and beyond.

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RCJ050N25 Nch 250V 5.0A Power MOSFET Datasheet l Outline (2) V 250V DSS LPT(S) (SC-83) R (Max.) 1360mW DS(on) I 5.0A D (1) P 30W (3) D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 24 Switching Power Supply Type Quantity (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ050N25 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 5.0 A c D Continuous drain current *1 T = 100C A I 2.7 c D *2 Pulsed drain current I 20 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 1.82 mJ E AS *3 Avalanche current I 2.5 A AR T = 25C P 30 W c D Power dissipation *4 P T = 25C 1.56 W D a T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCJ050N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 4.16 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current - - 10 mA DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 10 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.5 - 5.5 V GS (th) DS D V = 10V, I = 2.5A - 970 1360 GS D Static drain - source *5 V = 10V, I = 2.5A R mW GS D DS(on) on - state resistance - 2100 2950 T = 125C j Forward transfer admittance g V = 10V, I = 2.5A 1.25 2.50 - S fs DS D www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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