X-On Electronics has gained recognition as a prominent supplier of RCD075N20TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCD075N20TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCD075N20TL ROHM

RCD075N20TL electronic component of ROHM
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Part No.RCD075N20TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 200V 7.5A Automotive 3-Pin(2+Tab) CPT T/R
Datasheet: RCD075N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
49: USD 0.8337 ea
Line Total: USD 40.85 
Availability - 1629
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 49  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 121
Multiples : 1
121 : USD 0.8788
250 : USD 0.8436
500 : USD 0.8132
1000 : USD 0.7866
2500 : USD 0.7634

970
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 121
Multiples : 1
121 : USD 0.8788
250 : USD 0.8436
500 : USD 0.8132
1000 : USD 0.7866

1629
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 49
Multiples : 1
49 : USD 0.8337
58 : USD 0.7102
100 : USD 0.6077
200 : USD 0.5752
500 : USD 0.5379
1000 : USD 0.5054

   
Manufacturer
Product Category
Packaging
Channel Mode
Operating Temp Range
Gate-Source Voltage Max
Package Type
Number Of Elements
Mounting
Pin Count
Drain-Source On-Volt
Operating Temperature Classification
Rad Hardened
Continuous Drain Current
Polarity
Type
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RCD075N20TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCD075N20TL and other electronic components in the MOSFETs category and beyond.

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RCD075N20 Nch 200V 7.5A Power MOSFET Datasheet l Outline V 200V DSS CPT3 (SC-63) R (Max.) 325mW DS(on) <SOT-428> I 7.5A D (2) (1) (3) P 20W D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking C07N20 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 200 V DSS *1 T = 25C I 7.5 A c D Continuous drain current *1 T = 100C A I 4.1 c D *2 Pulsed drain current I 30 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 4.13 mJ AS *3 Avalanche current I 3.75 A AS T = 25C P 20 W c D Power dissipation *4 P T = 25C 0.85 W D a Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 1/12Data Sheet RCD075N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 6.25 C/W thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage I mA DSS drain current V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 3.75A - 250 325 GS D Static drain - source *5 V = 10V, I = 3.75A R mW GS D DS(on) on - state resistance - 515 670 T = 125C j g V = 10V, I = 3.75A Forward transfer admittance 1.5 3.0 - S fs DS D www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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