X-On Electronics has gained recognition as a prominent supplier of RAQ045P01TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RAQ045P01TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RAQ045P01TCR ROHM

RAQ045P01TCR electronic component of ROHM
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See Product Specifications
Part No.RAQ045P01TCR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RAQ045P01TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5852 ea
Line Total: USD 0.59 
Availability - 5883
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5883
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5852
10 : USD 0.3795
100 : USD 0.2541
500 : USD 0.2024
1000 : USD 0.1881
3000 : USD 0.1496
9000 : USD 0.1452
24000 : USD 0.143
45000 : USD 0.1419

2880
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 237
Multiples : 1
237 : USD 0.448
250 : USD 0.4299
500 : USD 0.4144
1000 : USD 0.4009
2500 : USD 0.3891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RAQ045P01TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RAQ045P01TCR and other electronic components in the MOSFETs category and beyond.

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RAQ045P01 Datasheet Pch -12V -4.5A Small Signal MOSFET llOutline SOT-457T V -12V DSS TSMT6 R (Max.) 30m DS(on) I 4.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT6). 5) Pb-free laed plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking SC llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 4.5 A D *1 I Pulsed drain current 18 A DP V Gate - Source voltage 0 -8 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160630 - Rev.001 RAQ045P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current I V = -8V, V = 0V Gate - Source leakage current - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4.5A - 22 30 GS D V = -2.5V, I = -2.2A - 28 39 GS D V = -1.8V, I = -2.2A - 38 57 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.5V, I = -0.9A - 50 100 GS D V = -4.5V, I = -4.5A GS D - 34 48 T = 125 j R Gate resistance f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = -6V, I = -4.5A 5.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/10 20160630 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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