RB050L-60DDTE25 ROHM

Data Sheet Schottky barrier diode RB050L-60 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 2.0 2.60.2 4 3 Features 0.10.02 1)Small power mold type. (PMDS) 0.1 2)Low I R PMDS 3)High reliability 2.00.2 1.50.2 Structure ROHM : PMDS JEDEC : SOD-106 Construction Manufacture Date Silicon epitaxial planar Taping specifications (Unit : mm) 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 60 V RM V Reverse voltage (DC) 60 V R Average rectified forward current (*1) 3 Io A Average rectified forward current (*2) 2 Io A Forward current surge peak (60Hz 1cyc) I 70 A FSM Junction temperature Tj 150 C Storage temperature 40 to 150 Tstg C (*1) On the Glass epoxy substrate, half sine wave at 180 Tc=69C MAX (*2) On the Glass epoxy substrate, half sine wave at 180 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V 1 I =2.0A - - 0.52 V F F Forward voltage V 2 - - 0.56 V I =3.0A F F V =60V Reverse current I - - 100 R A R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.A 1/3 4.50.2 1.20.3 5.00.3 2.0 5.30.1 0.05 9.50.1 5.50.05 1.750.1 120.2 4.2Data Sheet RB050L-60 10000 1000 10 Ta=25 C f=1MHz 1000 Ta=125 C Ta=75 C 100 Ta=75 C 1 100 Ta=125 C 10 Ta=-25 C Ta=25 C 1 0.1 10 0.1 Ta=-25 C 0.01 0.01 0.001 1 0 0.1 0.20.3 0.40.50.6 0 102030405060 0 5 10 15 20 25 30 FORWARD VOLTAGEV (V) REVERSE VOLTAGEV (V) R REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS F F R 650 0.52 100 640 Ta=25 C 90 Ta=25C Ta=25C f=1MHz 0.51 I =3A 630 F 80 V =60V R =0V V R n=50pcs n=50pcs 620 70 n=20pcs 0.5 610 60 AVE25.93A 0.49 600 50 40 590 0.48 30 580 20 570 0.47 AVE:0.4884V AVE:597.5pF 10 560 0.46 0 550 V DISPERSION MAP I DISPERSION MAP F Ct DISPERSION MAP R 300 50 300 Ta=25 C =0.1A Ifsm 250 I F 250 40 I =0.1A R Irr=0.1I R 200 8.3ms8.3ms 200 n=20pcs 30 1cyc AVE:207.4A 150 150 20 100 Ifsm 1cyc 100 AVE25.6ns 10 50 50 8.3ms 0 0 0 110 100 NUMBER OF CYCLES I DISRESION MAP trr DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 1000 5 1000 Mounted on epoxy board Rth(j-a) 4 100 100 D=1/2 DC 3 Rth(j-c) 10 Sin( 180) 2 I =100mA F 10 IM=100mA Ifsm t 1 1 1ms time 300us 1 0 0.1 1 10 100 012 345 0.001 0.1 10 1000 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) FSM F F FSM TRANSIENT REVERSE CURRENT:I (uA) R REVERSE CURRENT:I (uA) THAERMAL IMPEDANCE:Rth ( REVERSE RECOVERY TIME:trr(ns) R /W) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD POWER FORWARD CURRENT:I (A) FSM TERMINALS:Ct(pF) TERMINALS:Ct(pF) DISSIPATION:Pf(W)