RB021VA90TR ROHM

Schottky barrier Diode RB021VA90 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 Features 1) Small power mold type (TUMD2) 2) Low VF 3) High reliability TUMD2 Structure Silicon epitaxial planar Structure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping dimensions (Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 1.430.05 4.00.1 1.00.2 0 0.90.08 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 90 V RM Reverse voltage (DC) V 90 V R Average rectified forward current Io 0.2 A Forward current surge peak 60Hz1cyc I 5 A FSM Junction temperature Tj 125 Storage temperature 40 to 125 Tstg Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.49 V I =200mA F F Reverse current I - - 900 A V =90V R R www.rohm.com 2011.04 - Rev.C 1/3 c 2011 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5 RB021VA90 Data Sheet Electrical characteristic curves(Ta=25C) 100 100000 1000 Ta=125 f=1MHz 10000 Ta=125 Ta=75 1000 100 Ta=75 100 10 Ta=25 Ta=25 10 10 Ta=-25 Ta=-25 1 0.1 1 1 0 100 200 300 400 500 600 0 1020 3040 5060 7080 90 010 20 30 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS Ct 470 300 70 Ta=25 Ta=25 Ta=25 69 IF=0.2A VR=90V 250 f=1MHz 460 n=30pcs 68 n=30pcs VR=0V n=10pcs 67 200 450 66 150 65 440 64 100 AVE:28.68uA 63 430 62 50 AVE:442.8mV 61 AVE:64.35pF 0 420 60 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 30 30 Ta=25 1cyc Ifsm 25 25 IF=0.5A 25 Ifsm IR=1A Irr=0.25*IR 8.3ms 8.3ms 8.3ms 20 20 20 n=10pcs 1cyc 15 15 15 10 10 10 5 5 5 AVE:14.6A AVE:6.40ns 0 0 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 0.3 30 1000 IM=10mA IF=0.1A 25 Ifsm t time 1ms Rth(j-a) 0.2 20 300us D=1/2 15 100 DC Sin(180) 10 Rth(j-c) 0.1 5 0 0 10 0 0.1 0.2 0.3 0.4 0.5 1 10 100 0.001 0.1 10 1000 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS www.rohm.com 2011.04 - Rev.C 2/3 c 2011 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IF(mA) FORWARD CURRENT:IFSM(A) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE CURRENT:IR(uA) REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)