X-On Electronics has gained recognition as a prominent supplier of R8002ANX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R8002ANX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R8002ANX ROHM

R8002ANX electronic component of ROHM
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See Product Specifications
Part No.R8002ANX
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 800 V 2A (Tc) 35W (Tc) Through Hole TO-220FM
Datasheet: R8002ANX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
57: USD 1.9578 ea
Line Total: USD 111.59 
Availability - 291
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 57  Multiples: 1
Pack Size: 1
Availability Price Quantity
232
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 57
Multiples : 1
57 : USD 1.9578
100 : USD 1.8702

291
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 57
Multiples : 1
57 : USD 1.9578
100 : USD 1.8702
250 : USD 1.7952

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R8002ANX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R8002ANX and other electronic components in the MOSFETs category and beyond.

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R8002ANX Nch 800V 2A Power MOSFET Datasheet Outline V 800V DSS TO-220FM R (Max.) 4.3 DS(on) I 2A D (3) P (2) 36W D (1) Features Inner circuit (2) 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain *1 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS (1) 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating RoHS compliant Packaging specifications Packaging Bulk Reel size (mm) - Application Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Taping code - Marking R8002ANX Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 800 V DSS *1 T = 25C I 2 A c D Continuous drain current *1 T = 100C I 1 A c D *2 Pulsed drain current A I 8 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 0.265 mJ E AS *4 Avalanche energy, repetitive E 0.212 mJ AR *3 Avalanche current I 1 A AR Power dissipation (T = 25C) P 36 W c D T Junction temperature 150 C j Range of storage temperature T 55 to 150 C stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 1/13 Not Recommended for New DesignsData Sheet R8002ANX Absolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 2A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.41 C/W thJC Thermal resistance, junction - ambient R - -70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Symbol Conditions Unit Parameter Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 800 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 2A - 900 - V (BR)DS GS D breakdown voltage V = 800V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V-n- A 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3-V5 GS (th) DS D V = 10V, I = 1A GS D Static drain - source *6 T = 25C R - 3.3 4.3 j DS(on) on - state resistance T = 125C - 6.63 - j R Gate input resistance f = 1MHz, open drain - 5.9 - G www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 2/13 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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