X-On Electronics has gained recognition as a prominent supplier of RAF040P01TCL MOSFET across the USA, India, Europe, Australia, and various other global locations. RAF040P01TCL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RAF040P01TCL ROHM

RAF040P01TCL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RAF040P01TCL
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET MOSFET P-CH 1.5V 4A
Datasheet: RAF040P01TCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5244 ea
Line Total: USD 0.52

Availability - 10068
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Wed. 07 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.9378
10 : USD 0.7822
30 : USD 0.7035
100 : USD 0.6265
500 : USD 0.5552
1000 : USD 0.531

10068
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5244
10 : USD 0.4083
100 : USD 0.3013
500 : USD 0.2507
1000 : USD 0.2105
3000 : USD 0.1817
9000 : USD 0.1817
24000 : USD 0.1782

7621
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 128
Multiples : 1
128 : USD 0.3185
200 : USD 0.3169
500 : USD 0.2584
1000 : USD 0.2422
2000 : USD 0.2405
3000 : USD 0.2275
6000 : USD 0.2145

23224
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 233
Multiples : 1
233 : USD 0.4564
250 : USD 0.4381
500 : USD 0.4222
1000 : USD 0.4085
2500 : USD 0.3965
5000 : USD 0.3858
10000 : USD 0.3763

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RAF040P01TCL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RAF040P01TCL and other electronic components in the MOSFET category and beyond.

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RAF040P01 Datasheet Pch -12V -4A Middle Power MOSFET llOutline SOT-323T V -12V DSS R (Max.) 30m DS(on) TUMT3 I 4A D P 0.8W D llInner circuit llFeatures 1) Low On-resistance 2) Low voltage drive(1.5V drive) 3) Small surface mount package(TUMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking SF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 4 A D *1 I Pulsed drain current 16 A DP V Gate - Source voltage 0 -8 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160404 - Rev.001 RAF040P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source leakage current I V = -8V, V = 0V - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4A - 22 30 GS D V = -2.5V, I = -2A - 27 38 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -2A - 35 53 GS D V = -1.5V, I = -0.8A - 40 68 GS D R Gate resistance f = 1MHz, open drain - 8.1 - G Forward Transfer *4 Y V = -6V, I = -4A 5.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20160404 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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