X-On Electronics has gained recognition as a prominent supplier of RAF040P01TCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RAF040P01TCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RAF040P01TCL ROHM

RAF040P01TCL electronic component of ROHM
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See Product Specifications
Part No.RAF040P01TCL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET MOSFET P-CH 1.5V 4A
Datasheet: RAF040P01TCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5244 ea
Line Total: USD 0.52 
Availability - 9762
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9542
10 : USD 0.7958
30 : USD 0.7156
100 : USD 0.6375
500 : USD 0.565
1000 : USD 0.5401

9762
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5244
10 : USD 0.3772
100 : USD 0.2829
500 : USD 0.2289
1000 : USD 0.2105
3000 : USD 0.1817
9000 : USD 0.1737

17008
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 200
Multiples : 1
200 : USD 0.5329
250 : USD 0.5114
500 : USD 0.493
1000 : USD 0.477
2500 : USD 0.4628
5000 : USD 0.4503
10000 : USD 0.4394

2813
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 49
Multiples : 1
49 : USD 0.8417
60 : USD 0.6808
100 : USD 0.4858
200 : USD 0.4826
500 : USD 0.3868
1000 : USD 0.3607

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RAF040P01TCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RAF040P01TCL and other electronic components in the MOSFETs category and beyond.

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RAF040P01 Datasheet Pch -12V -4A Middle Power MOSFET llOutline SOT-323T V -12V DSS R (Max.) 30m DS(on) TUMT3 I 4A D P 0.8W D llInner circuit llFeatures 1) Low On-resistance 2) Low voltage drive(1.5V drive) 3) Small surface mount package(TUMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking SF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 4 A D *1 I Pulsed drain current 16 A DP V Gate - Source voltage 0 -8 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160404 - Rev.001 RAF040P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source leakage current I V = -8V, V = 0V - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4A - 22 30 GS D V = -2.5V, I = -2A - 27 38 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -2A - 35 53 GS D V = -1.5V, I = -0.8A - 40 68 GS D R Gate resistance f = 1MHz, open drain - 8.1 - G Forward Transfer *4 Y V = -6V, I = -4A 5.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20160404 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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