R8010ANX Nch 800V 10A Power MOSFET Datasheet l Outline V 800V DSS TO-220FM R (Max.) 0.56W DS(on) I 10A D (3) P 40W (2) D (1) l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R8010ANX lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 800 V DSS *1 T = 25C I 10 A c D Continuous drain current *1 T = 100C A I 4.6 c D *2 Pulsed drain current I 40 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 6.63 mJ E AS *4 Avalanche energy, repetitive E 2.7 mJ AR *3 Avalanche current I 5 A AR Power dissipation (T = 25C) P 40 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 1/13 Not Recommended for New DesignsData Sheet R8010ANX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 640V, I = 10A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.13 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 800 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 5A - 900 - V (BR)DS GS D breakdown voltage V = 800V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 mA DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS (th) DS D V = 10V, I = 5A GS D Static drain - source *6 T = 25C R - 0.43 0.56 W j DS(on) on - state resistance T = 125C - 0.95 - j R Gate input resistance f = 1MHz, open drain - 12.8 - W G www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 2/13 Not Recommended for New Designs