X-On Electronics has gained recognition as a prominent supplier of R8010ANX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R8010ANX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R8010ANX ROHM

R8010ANX electronic component of ROHM
R8010ANX ROHM
R8010ANX MOSFETs
R8010ANX  Semiconductors

Images are for reference only
See Product Specifications
Part No. R8010ANX
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: R8010ANX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 2.035 ea
Line Total: USD 1017.5 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
0
Ship by Fri. 02 May to Tue. 06 May
MOQ : 500
Multiples : 500
500 : USD 2.035
1000 : USD 2.013
2500 : USD 1.969
5000 : USD 1.947

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 15
Multiples : 1
15 : USD 6.916
50 : USD 3.224
100 : USD 2.678
200 : USD 2.5571

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 21
Multiples : 1
21 : USD 4.9912
25 : USD 4.7767
50 : USD 4.5947
100 : USD 4.2681

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 23
Multiples : 1
23 : USD 3.7157
25 : USD 3.6413

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 9
Multiples : 1
9 : USD 4.7202
10 : USD 4.264
50 : USD 3.5245
100 : USD 3.5087
200 : USD 3.3671

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 23
Multiples : 1
23 : USD 4.3352
25 : USD 4.1489
50 : USD 3.9908
100 : USD 3.8555

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R8010ANX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R8010ANX and other electronic components in the MOSFETs category and beyond.

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R8010ANX Nch 800V 10A Power MOSFET Datasheet l Outline V 800V DSS TO-220FM R (Max.) 0.56W DS(on) I 10A D (3) P 40W (2) D (1) l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R8010ANX lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 800 V DSS *1 T = 25C I 10 A c D Continuous drain current *1 T = 100C A I 4.6 c D *2 Pulsed drain current I 40 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 6.63 mJ E AS *4 Avalanche energy, repetitive E 2.7 mJ AR *3 Avalanche current I 5 A AR Power dissipation (T = 25C) P 40 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 1/13 Not Recommended for New DesignsData Sheet R8010ANX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 640V, I = 10A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.13 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 800 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 5A - 900 - V (BR)DS GS D breakdown voltage V = 800V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 mA DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS (th) DS D V = 10V, I = 5A GS D Static drain - source *6 T = 25C R - 0.43 0.56 W j DS(on) on - state resistance T = 125C - 0.95 - j R Gate input resistance f = 1MHz, open drain - 12.8 - W G www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 2/13 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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