X-On Electronics has gained recognition as a prominent supplier of RCD041N25TL MOSFET across the USA, India, Europe, Australia, and various other global locations. RCD041N25TL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RCD041N25TL ROHM

RCD041N25TL electronic component of ROHM
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See Product Specifications
Part No.RCD041N25TL
Manufacturer: ROHM
Category: MOSFET
Description: Trans MOSFET N-CH 250V 4A Automotive 3-Pin(2+Tab) CPT T/R
Datasheet: RCD041N25TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

111: USD 0.3672 ea
Line Total: USD 40.76

Availability - 4850
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ: 111  Multiples: 1
Pack Size: 1
Availability Price Quantity
2337
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 286
Multiples : 1
286 : USD 0.3566
500 : USD 0.3437
1000 : USD 0.3325

320
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 286
Multiples : 1
286 : USD 0.3566

4850
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 111
Multiples : 1
111 : USD 0.3672
200 : USD 0.3657
500 : USD 0.3267
1000 : USD 0.3137
2000 : USD 0.312
2500 : USD 0.3104
5000 : USD 0.2909

   
Manufacturer
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We are delighted to provide the RCD041N25TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCD041N25TL and other electronic components in the MOSFET category and beyond.

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RCD041N25 Nch 250V 4.0A Power MOSFET Data Sheet l Outline V 250V DSS CPT3 (SC-63) R (Max.) 1300mW DS(on) <SOT-428> (3) I 4.0A D (2) (1) P 20W D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking C41N25 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 4.0 A c D Continuous drain current *1 T = 100C A I 2.2 c D *2 Pulsed drain current I 16 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 1.61 mJ E AS *3 Avalanche current I 2.0 A AR T = 25C P 20 W c D Power dissipation *4 P T = 25C 0.85 W D a T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 1/12Data Sheet RCD041N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage drain current I mA DSS V = 250V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.5 - 5.5 V GS (th) DS D V = 10V, I = 2.0A - 930 1300 GS D Static drain - source *5 V = 10V, I = 2.0A R mW GS D DS(on) on - state resistance - 1950 2730 T = 125C j g V = 10V, I = 2.0A Forward transfer admittance 1.1 2.2 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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