X-On Electronics has gained recognition as a prominent supplier of RCD041N25TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCD041N25TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCD041N25TL ROHM

RCD041N25TL electronic component of ROHM
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Part No.RCD041N25TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 250V 4A Automotive 3-Pin(2+Tab) CPT T/R
Datasheet: RCD041N25TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
285: USD 0.3587 ea
Line Total: USD 102.23 
Availability - 2337
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 285  Multiples: 1
Pack Size: 1
Availability Price Quantity
2337
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 285
Multiples : 1
285 : USD 0.3587
500 : USD 0.3457
1000 : USD 0.3343

320
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 285
Multiples : 1
285 : USD 0.3587

4850
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 90
Multiples : 1
90 : USD 0.4534
100 : USD 0.4322
200 : USD 0.4307
500 : USD 0.3852
1000 : USD 0.3705
2000 : USD 0.3689
2500 : USD 0.3672
5000 : USD 0.3445

   
Manufacturer
Product Category
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We are delighted to provide the RCD041N25TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCD041N25TL and other electronic components in the MOSFETs category and beyond.

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RCD041N25 Nch 250V 4.0A Power MOSFET Data Sheet l Outline V 250V DSS CPT3 (SC-63) R (Max.) 1300mW DS(on) <SOT-428> (3) I 4.0A D (2) (1) P 20W D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking C41N25 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 4.0 A c D Continuous drain current *1 T = 100C A I 2.2 c D *2 Pulsed drain current I 16 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 1.61 mJ E AS *3 Avalanche current I 2.0 A AR T = 25C P 20 W c D Power dissipation *4 P T = 25C 0.85 W D a T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 1/12Data Sheet RCD041N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage drain current I mA DSS V = 250V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.5 - 5.5 V GS (th) DS D V = 10V, I = 2.0A - 930 1300 GS D Static drain - source *5 V = 10V, I = 2.0A R mW GS D DS(on) on - state resistance - 1950 2730 T = 125C j g V = 10V, I = 2.0A Forward transfer admittance 1.1 2.2 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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