X-On Electronics has gained recognition as a prominent supplier of RCD051N20TL MOSFET across the USA, India, Europe, Australia, and various other global locations. RCD051N20TL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RCD051N20TL ROHM

RCD051N20TL electronic component of ROHM
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See Product Specifications
Part No.RCD051N20TL
Manufacturer: ROHM
Category: MOSFET
Description: Trans MOSFET N-CH 200V 5A Automotive 3-Pin(2+Tab) CPT T/R
Datasheet: RCD051N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

171: USD 0.4877 ea
Line Total: USD 83.4

Availability - 2425
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ: 171  Multiples: 1
Pack Size: 1
Availability Price Quantity
1137
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 171
Multiples : 1
171 : USD 0.6531
250 : USD 0.6269
500 : USD 0.6043
1000 : USD 0.5845

2425
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 171
Multiples : 1
171 : USD 0.4877

   
Manufacturer
Product Category
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We are delighted to provide the RCD051N20TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCD051N20TL and other electronic components in the MOSFET category and beyond.

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RCD051N20 Nch 200V 5.0A Power MOSFET Data Sheet l Outline V 200V DSS CPT3 (SC-63) R (Max.) 760mW DS(on) <SOT-428> (3) I 5.0A D (2) (1) P 20W D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking C51N20 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 5.0 A c D Continuous drain current *1 T = 100C A I 2.7 c D *2 Pulsed drain current I 20 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 1.83 mJ E AS *3 Avalanche current I 2.5 A AR T = 25C P 20 W c D Power dissipation *4 P T = 25C 0.85 W D a T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 1/12Data Sheet RCD051N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage drain current I mA DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 2.5A - 540 760 GS D Static drain - source *5 V = 10V, I = 2.5A R mW GS D DS(on) on - state resistance - 785 1100 T = 125C j g V = 10V, I = 2.5A Forward transfer admittance 1.3 2.6 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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