R8008ANJ FRG Datasheet Nch 800V 8A Power MOSFET llOutline TO-263S V 800V DSS SC-83 R (Max.) 1.03 DS(on) LPT(S) I 8A D P 195W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Pb-free plating RoHS compliant 5) AEC-Q101 qualified 6) llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Power Supply Basic ordering unit (pcs) 1000 Taping code TL Marking R8008ANJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 800 V DSS *1 Continuous drain current (T = 25C) I 8 A c D *2 I Pulsed drain current 32 A DP Gate - Source voltage V 30 V GSS *3 Avalanche current, single pulse I 4 A AS *3 E Avalanche energy, single pulse 4.2 mJ AS Power dissipation (T = 25C) P 195 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170920 - Rev.001 R8008ANJ FRG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 0.64 /W thJC R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 800 - - V (BR)DSS GS D voltage V = 800V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - - j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS(th) DS D V = 10V, I = 4.0A GS D Static drain - source *4 R T = 25C - 0.79 1.03 DS(on) j on - state resistance T = 125C - 1.54 - j Gate resistance R f = 1MHz, open drain - 6.6 - G www.rohm.com 2/11 20170920 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.