X-On Electronics has gained recognition as a prominent supplier of E3M0280090D MOSFETs across the USA, India, Europe, Australia, and various other global locations. E3M0280090D MOSFETs are a product manufactured by Wolfspeed. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

E3M0280090D Wolfspeed

E3M0280090D electronic component of Wolfspeed
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Part No.E3M0280090D
Manufacturer: Wolfspeed
Category: MOSFETs
Description: MOSFET 900V 280mOhms G3 SiC MOSFET
Datasheet: E3M0280090D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 7.153
10 : USD 6.7045
30 : USD 5.796
120 : USD 5.336
270 : USD 5.221
510 : USD 5.037
1020 : USD 4.853
2520 : USD 4.692
5010 : USD 4.5885
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 0.8795
10 : USD 0.8794
25 : USD 0.876
50 : USD 0.8758
100 : USD 0.8737
1000 : USD 0.8734
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the E3M0280090D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the E3M0280090D and other electronic components in the MOSFETs category and beyond.

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V 900 V DS I 25C 11.5 A D E3M0280090D R 280 m DS(on) Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Automotive EV battery chargers Renewable energy High voltage DC/DC converters Marking Part Number Package Telecom Power Supplies E3M0280090D TO-247-3 E3M0280090 Maximum Ratings (T = 25 C unless otherwise specified) C Parameter Value Unit Test Conditions Note Symbol Drain - Source Voltage 900 V VGS = 0 V, ID = 100 A V DSmax V Gate - Source Voltage -8/+18 V Note: 1 GSmax V Gate - Source Voltage (Recommended operating values) -4/+15 V Note: 2 GSop 11.5 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 7.5 V = 15 V, T = 100C GS C I Pulsed Drain Current 22 A Pulse width t limited by T Fig. 22 D(pulse) jmax P Power Dissipation 54 W T =25C, T = 150 C Fig. 20 P C J D -55 to T , T Operating Junction and Storage Temperature C J stg +150 1.6mm (0.063) from case for T Solder Temperature 260 C L 10s 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in Note (1): When using MOSFET Body Diode V = -4V/+18V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 E3M0280090D Rev. - , 07-2018Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.7 2.1 3.5 V VDS = VGS, ID = 1.2 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 1.2 mA, T = 150C DS GS D J IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 900 V, VGS = 0 V I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 280 364 VGS = 15 V, ID = 7.5 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 385 VGS = 15 V, ID = 7.5 A, TJ = 150C 3.6 V = 15 V, I = 7.5 A DS DS g Transconductance S Fig. 7 fs 3.1 V = 15 V, I = 7.5 A, T = 150C DS DS J Ciss Input Capacitance 150 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 20 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 2 rss AC V = 25 mV E C Stored Energy 4.5 J Fig. 16 oss oss Fig. 26, E Turn-On Switching Energy (Body Diode FWD) 57 ON V = 400 V, V = -4 V/15 V, I = 7.5 A, DS GS D J 29 R = 2.5, L= 220 H, T = 150C J G(ext) E Turn Off Switching Energy (Body Diode FWD) 6 Note 3 OFF td(on) Turn-On Delay Time 26 V = 400 V, V = -4 V/15 V DD GS Fig. 27, tr Rise Time 10 I = 7.5 A, R = 2.5 , D G(ext) ns 29 Timing relative to V DS t Turn-Off Delay Time 17.5 d(off) Note 3 Inductive load t Fall Time 7.5 f , R Internal Gate Resistance 26 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 2.8 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 3.4 I = 7.5 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 9.5 (T = 25C unless otherwise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.8 V V = -4 V, I = 4 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.4 V V = -4 V, I = 4 A, T = 150 C GS SD J I Continuous Diode Forward Current 9.6 A V = -4 V, T = 25C Note 1 S C GS I Diode pulse Current 22 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 20 ns rr V = -4 V, I = 4 A, V = 400 V GS SD R Note 1 Q Reverse Recovery Charge 47 nC rr dif/dt = 800 A/s, T = 150 C J I Peak Reverse Recovery Current 3.4 A rrm Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 2.3 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 E3M0280090D Rev. - , 07-2018

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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