GS-065-004-1-L Gan Systems

GS-065-004-1-L 650 V E-mode GaN transistor Preliminary Datasheet Features 650 V enhancement mode power transistor Bottom-cooled, small 5x6 mm PDFN package R = 450 m DS(on) I = 4 A DS(max) Ultra-low FOM Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Package Outline Circuit Symbol High switching frequency (> 1 MHz) Fast and controllable fall and rise times top view Reverse conduction capability Zero reverse recovery loss Source Sense (SS) pin for optimized gate drive RoHS 3 (6+4) compliant Applications Description Power Adapters The GS-065-004-1-L is an enhancement mode GaN-on- LED lighting drivers Silicon power transistor. The properties of GaN allow for Fast Battery Charging high current, high voltage breakdown and high switching Power Factor Correction frequency. GaN Systems innovates with industry leading Appliance Motor Drives advancements such as patented Island Technology cell Wireless Power Transfer Industrial Power Supplies layout which realizes high-current die and high yield. The GS-065-004-1-L is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 210104 2009-2021 GaN Systems Inc. 1 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback GS-065-004-1-L 650 V E-mode GaN transistor Preliminary Datasheet Absolute Maximum Ratings (T = 25 C except as noted) case Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Drain-to-Source Voltage - transient (Note 1) V 850 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 4 A case DS Continuous Drain Current (T = 100 C) I 2.6 A case DS Pulse Drain Current (Pulse width 10 s, V = 6 V) (Note 2) I 7.1 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 4 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) R 40 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 2 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Packing Reel Reel Ordering code Package type Qty method Diameter Width GS-065-004-1-L-TR 5x6 mm PDFN Tape-and-Reel 3000 13 (330 mm) 12mm GS-065-004-1-L-MR 5x6 mm PDFN Mini-Reel 250 7 (180 mm) 12mm Rev 210104 2009-2021 GaN Systems Inc. 2 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback