GTVA104001FA Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, DC - 1.4 GHz Description The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with GTVA104001FA earless flange. Package H-37265J-2 Features Performance at 1% Duty Cycle V = 50 V, I = 100 mA, GaN on SiC HEMT technology DS DQ 128 s1%, T = 25C flange Input matched Typical pulsed CW performance: pulse width = 128 s, 23 duty cycle = 10%, DC - 1.4 GHz, V = 50 V, I = 100 DS DQ ergoqhgorgn mA 22qpjgfq4po5g - Output power = 400 W - Drain Efficiency = 70 % - Gain = 19 dB 21 Human Body Model Class 2 (per ANSI/ESDA/JEDEC 20 JS-001) Capable of handling 10:1 VSWR (all phase angles) at 960 MHz 19 1030 MHz V = 50 V, I = 100 mA, = 1090 MHz, P = 400 W DS DQ OUT 1150 MHz peak 1215 MHz 18 Pb-free and RoHS compliant 1090 MHz g104001fa-gr1 17 0 50 100 150 200 250 300 350 400 450 500 Output Power (W) RF Characteristics Pulsed RF Performance Specifications (tested in Wolfspeed production Doherty test fixture) V = 50 V, I = 100 mA, P = 390 W peak, = 1030 MHz, 128 s pulse width, 10% duty cycle DD DQ OUT Characteristic Symbol Min Typ Max Unit Gain G 18.5 19.5 21.5 dB ps Drain Efficiency h 73 77 % D All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. P03.1-A, 2019-02-21 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain (dB)GTVA104001FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V = 8 V, I = 10 mA V 150 V GS D (BR)DSS Drain-source Leakage Current V = 8 V, V = 10 V I 5.8 mA GS DS DSS Gate Threshold Voltage V = 10 V, I = 42 mA V 3.8 3.0 2.3 V DS D GS(th) Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage V 0 50 V DD Gate Quiescent Voltage V = 48 V, I = 0.11 A V 2.8 V DS D GS(Q) Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V 125 V DSS Gate-source Voltage V 10 to +2 V GS Gate Current I 20 mA G Drain Current I 4.6 A D Junction Temperature T 225 C J Storage Temperature Range T 65 to +150 C STG Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V ) specified above. DD Thermal Chracteristics T = 70C, P = 100 W, V = 50 V, I = 100 mA, 400 W (peak), 1030 MHz, 128 s pulse width, 10% duty c ycle FLANGE DISS DD DQ Parameter Symbol Value Unit Thermal Resistance, Junction to Case R 0.14 C/W qJC Ordering Information Device: Type and Version Order Code Package Shipping GTVA104001FA V1 R0 GTVA104001FA-V1-R0 H-37265J-2, earless flange Tape & Reel, 50 pcs GTVA104001FA V1 R2 GTVA104001FA-V1-R2 H-37265J-2, earless flange Tape & Reel, 250 pcs Evaluation Board: Type and Version Frequency Description LTN/GTVA104001FA-V1 DC - 1.4 GHz Class AB, Rogers 3010, 0.64 mm 0.025 thick, 2 oz. copper, = 10.2 r