T2G6001528-Q3 18W, 28V, DC 6 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: DC to 6 GHz Output Power (P3dB): 19 W at 5.2 GHz 11 Linear Gain: >9 dB at 5.2 GHz Operating Voltage: 28 V Low thermal resistance package 22 General Description Pin Configuration The TriQuint T2G6001528-Q3 is an 18W (P ) discrete 3dB Pin No. Label GaN on SiC HEMT which operates from DC to 6.0 GHz. 1 V / RF OUT D The device is constructed with TriQuints proven 2 VG / RF IN TQGaN25 process, which features advanced field plate Flange Source techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description Packaged part T2G6001528-Q3 EAR99 Flangeless T2G6001528-Q3- 5.0 6.0 GHz EAR99 EVB1 Evaluation Board T2G6001528-Q3- 1.8 2.6 GHz EAR99 EVB2 Evaluation Board Datasheet: Rev C 05-13-15 Disclaimer: Subject to change without notice - 1 of 17 - 2015 TriQuint www.triquint.com T2G6001528-Q3 18W, 28V, DC 6 GHz, GaN RF Power Transistor (1) Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BVDG) 100 V min. Drain Voltage (VD) 32 V (Typ.) Gate Voltage Range (V ) -7 to 0 V Drain Quiescent Current (I ) 50 mA (Typ.) G DQ Drain Current (I ) 5 A Peak Drain Current ( I ) 1.4 A (Typ.) D D Gate Current (I ) -5 to 14 mA Gate Voltage (V ) -2.9 V (Typ.) G G Power Dissipation (P ) 28 W Channel Temperature (T ) 225 C (Max) D CH RF Input Power, CW, 2 36 dBm Power Dissipation, CW (PD) 20.9 W (Max) T = 25C (P ) IN 3 Channel Temperature (T ) 275 C Power Dissipation, Pulse (P ) 22.5 W (Max) CH D Mounting Temperature (30 320 C 1 Electrical specifications are measured at specified test seconds) conditions. Storage Temperature -40 to 150 C Specifications are not guaranteed over all recommended operating Operation of this device outside the parameter ranges conditions. given above may cause permanent damage. These are 2 Package at 85 C stress ratings only, and functional operation of the device 3 100uS Pulse Width, 20 % Duty Cycle, package at 85 C at these conditions is not implied. RF Characterization Load Pull Performance at 3.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 28 V, I = 50 mA, Pulse: 100uS, 20% A D DQ Symbol Parameter Min Typical Max Units GLIN Linear Gain 16.5 dB P3dB Output Power at 3 dB Gain Compression 19.6 W DE Drain Efficiency at 3 dB Gain Compression 69.6 % 3dB Power-Added Efficiency at 3 dB Gain PAE3dB 66.4 % Compression G Gain at 3 dB Compression 13.5 dB 3dB RF Characterization Load Pull Performance at 6.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 28 V, I = 50 mA, Pulse: 100uS, 20% A D DQ Symbol Parameter Min Typical Max Units GLIN Linear Gain 11.3 dB P Output Power at 3 dB Gain Compression 19.0 W 3dB DE Drain Efficiency at 3 dB Gain Compression 66.0 % 3dB Power-Added Efficiency at 3 dB Gain PAE3dB 56.2 % Compression G Gain at 3 dB Compression 8.3 dB 3dB Datasheet: Rev C 05-13-15 Disclaimer: Subject to change without notice - 2 of 17 - 2015 TriQuint www.triquint.com