MAGX-001214-500L0x
GaN on SiC HEMT Pulsed Power Transistor
Rev. V3
500 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty
Features
MAGX-001214-500L00
GaN on SiC D-Mode Transistor Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant
+50 V Typical Operation
MTTF = 600 years (T < 200C)
J
Applications
L-Band pulsed radar
Description
MAGX-001214-500L0S
The MAGX-001214-500L00 is a gold-metalized
matched Gallium Nitride (GaN) on Silicon Carbide
(SiC) RF power transistor optimized for pulsed
L-Band radar applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for todays
demanding application needs. High breakdown
voltages allow for reliable and stable operation
under more extreme mismatch load conditions
compared with older semiconductor technologies.
Ordering Information
Part Number Description
MAGX-001214-500L00 Flanged
MAGX-001214-500L0S Flangeless
1.2 - 1.4 GHz
MAGX-001214-SB3PPR
Evaluation Board
Typical RF Performance under standard operating conditions, P = 500 W (Peak)
OUT
Freq. P Gain I Eff. RL Droop +1 dB OD
IN D
(MHz) (W) (dB) (A) (%) (dB) (dB) (W)
1200 5.15 19.86 17.7 56.2 -12.7 0.29 568
1250 5.35 19.69 16.7 59.5 -10.3 0.30 561
1300 5.69 19.43 17.2 57.9 -10.9 0.33 554
1350 5.86 19.31 17.9 55.7 -15.3 0.36 547
1400 5.85 19.22 18.1 54.8 -17.5 0.38 549
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
MAGX-001214-500L0x
GaN on SiC HEMT Pulsed Power Transistor
Rev. V3
500 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty
Electrical Specifications: Freq. = 1200 - 1400 MHz, T = 25C
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
RF Functional Tests
Peak Input Power P - 6 8.9 W
IN
Power Gain G 17.5 19.2 - dB
P
V = 50 V, I = 400 mA
DD DQ
Drain Efficiency 50 56 - %
D
Pulse Width = 300 s,
Duty Cycle = 10%
Pulse Droop Droop - 0.4 0.7 dB
P = 500 W Peak (50 W avg.)
OUT
Load Mismatch Stability VSWR-S - 3:1 - -
Load Mismatch Tolerance VSWR-T - 5:1 - -
Extended Pulse Width Conditions
Peak Input Power P - 5.3 - W
V = 42 V, I = 400 mA IN
DD DQ
Pulse Width = 1 ms,
Power Gain G - 18.5 - dB
P
Duty Cycle = 10%
P = 375 W Peak (37.5 W avg.)
Drain Efficiency OUT - 55 - %
D
Electrical Characteristics: T = 25C
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
DC Characteristics
Drain-Source Leakage Current V = -8 V, V = 175 V I - 1.0 30 mA
GS DS DS
Gate Threshold Voltage V = 5 V, I = 75 mA V -5 -3.1 -2 V
DS D GS (TH)
Forward Transconductance V = 5 V, I = 17.5 mA G 12.5 19.2 - S
DS D M
Dynamic Characteristics
Input Capacitance Not applicable - Input matched C N/A N/A N/A pF
ISS
Output Capacitance C - 55 - pF
OSS
V = 50 V, V = -8 V,
DS GS
Freq. = 1 MHz
Reverse Transfer Capacitance C - 5.5 - pF
RSS
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: