MAGX-001214-500L00 MACOM

MAGX-001214-500L0x GaN on SiC HEMT Pulsed Power Transistor Rev. V3 500 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Features MAGX-001214-500L00 GaN on SiC D-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant +50 V Typical Operation MTTF = 600 years (T < 200C) J Applications L-Band pulsed radar Description MAGX-001214-500L0S The MAGX-001214-500L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for todays demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information Part Number Description MAGX-001214-500L00 Flanged MAGX-001214-500L0S Flangeless 1.2 - 1.4 GHz MAGX-001214-SB3PPR Evaluation Board Typical RF Performance under standard operating conditions, P = 500 W (Peak) OUT Freq. P Gain I Eff. RL Droop +1 dB OD IN D (MHz) (W) (dB) (A) (%) (dB) (dB) (W) 1200 5.15 19.86 17.7 56.2 -12.7 0.29 568 1250 5.35 19.69 16.7 59.5 -10.3 0.30 561 1300 5.69 19.43 17.2 57.9 -10.9 0.33 554 1350 5.86 19.31 17.9 55.7 -15.3 0.36 547 1400 5.85 19.22 18.1 54.8 -17.5 0.38 549 * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAGX-001214-500L0x GaN on SiC HEMT Pulsed Power Transistor Rev. V3 500 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Electrical Specifications: Freq. = 1200 - 1400 MHz, T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power P - 6 8.9 W IN Power Gain G 17.5 19.2 - dB P V = 50 V, I = 400 mA DD DQ Drain Efficiency 50 56 - % D Pulse Width = 300 s, Duty Cycle = 10% Pulse Droop Droop - 0.4 0.7 dB P = 500 W Peak (50 W avg.) OUT Load Mismatch Stability VSWR-S - 3:1 - - Load Mismatch Tolerance VSWR-T - 5:1 - - Extended Pulse Width Conditions Peak Input Power P - 5.3 - W V = 42 V, I = 400 mA IN DD DQ Pulse Width = 1 ms, Power Gain G - 18.5 - dB P Duty Cycle = 10% P = 375 W Peak (37.5 W avg.) Drain Efficiency OUT - 55 - % D Electrical Characteristics: T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics Drain-Source Leakage Current V = -8 V, V = 175 V I - 1.0 30 mA GS DS DS Gate Threshold Voltage V = 5 V, I = 75 mA V -5 -3.1 -2 V DS D GS (TH) Forward Transconductance V = 5 V, I = 17.5 mA G 12.5 19.2 - S DS D M Dynamic Characteristics Input Capacitance Not applicable - Input matched C N/A N/A N/A pF ISS Output Capacitance C - 55 - pF OSS V = 50 V, V = -8 V, DS GS Freq. = 1 MHz Reverse Transfer Capacitance C - 5.5 - pF RSS 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: