GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W NPT2022 Rev. V3 Features GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Tunable from DC - 2 GHz 48 V Operation 20 dB Gain 900 MHz 60% Drain Efficiency 900 MHz 100% RF Tested TO-272 Package RoHS* Compliant and 260C Reflow Compatible Functional Schematic Description The NPT2022 GaN on silicon HEMT D-Mode amplifier optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W in an industry standard plastic package with bolt down flange. 2 The NPT2022 is ideally suited for defense 1 communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ 3 UHF/L/S-band radar. Built using the SIGANTIC process - a proprietary GaN-on-Silicon technology. Ordering Information Pin Configuration Part Number Package 1 RF / V RF Input / Gate NPT2022 Bulk Quantity IN G 2 RF / V RF Output / Drain NPT2022-SMB1 Sample Board OUT D 1 3 Pad Ground / Source NPT2022-TR0250 Tape & Reel 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W NPT2022 Rev. V3 RF Electrical Specifications: T = 25C, V = 48 V, I = 600 mA C DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 900 MHz G - 21 - dB SS Saturated Output Power CW, 900 MHz P - 50.5 - dBm SAT Drain Efficiency at Saturation CW, 900 MHz - 62 - % SAT Power Gain 900 MHz, P = 100 W G 19 20 - dB OUT P Drain Efficiency 900 MHz, P = 100 W 56 58 - % OUT Ruggedness: Output Mismatch All phase angles VSWR = 10:1, No Device Damage DC Electrical Characteristics: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 160 V I - - 24 mA GS DS DLK Gate-Source Leakage Current V = -8 V, V = 0 V I - - 12 mA GS DS GLK Gate Threshold Voltage V = 48 V, I = 24 mA V -2.5 -1.6 -0.5 V DS D T Gate Quiescent Voltage V = 48 V, I = 600 mA V -2.1 -1.4 -0.3 V DS D GSQ On Resistance V = 2 V, I = 180 mA R - 0.2 - W DS D ON Maximum Drain Current V = 7 V pulsed, pulse width 300 s I - 14 - A DS D,MAX 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: