X-On Electronics has gained recognition as a prominent supplier of 2SK3557-6-TB-E RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. 2SK3557-6-TB-E RF JFET Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

2SK3557-6-TB-E ON Semiconductor

2SK3557-6-TB-E electronic component of ON Semiconductor
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See Product Specifications
Part No.2SK3557-6-TB-E
Manufacturer: ON Semiconductor
Category: RF JFET Transistors
Description: Transistors RF JFET LOW-FREQUENCY AMPLIFIER
Datasheet: 2SK3557-6-TB-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.174 ea
Line Total: USD 522 
Availability - 5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.174
6000 : USD 0.1635
9000 : USD 0.1565
12000 : USD 0.1536
27000 : USD 0.1509
51000 : USD 0.1486
102000 : USD 0.1463
150000 : USD 0.1441

5427
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4207
10 : USD 0.3316
25 : USD 0.3275
100 : USD 0.2563
250 : USD 0.2539
500 : USD 0.2154
1000 : USD 0.1998
3000 : USD 0.165

2706
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3483
50 : USD 0.2816
150 : USD 0.2483
500 : USD 0.2233
3000 : USD 0.2032
6000 : USD 0.1932

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Series
Type
Brand
Continuous Drain Current
Drain-Source Current At Vgs 0
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SK3557-6-TB-E from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK3557-6-TB-E and other electronic components in the RF JFET Transistors category and beyond.

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LOT No. RANK LOT No. Ordering number : EN7169A 2SK3557 N-Channel JFET 2SK3557 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Voltage V I =--10A, V =0V --15 V (BR)GDS G DS Gate Cutoff Current I V =--10V, V =0V --1.0 nA GSS GS DS Cutoff Voltage V (off) V =5V, I =100A --0.3 --0.7 --1.5 V GS DS D Drain Current I V =5V, V =0V 10* 32* mA DSS DS GS Forward Transfer Admittance yfs V =5V, V =0V, f=1kHz 24 35 mS DS GS Input Capacitance Ciss V =5V, V =0V, f=1MHz 10.0 pF DS GS Reverse Transfer Capacitance Crss V =5V, V =0V, f=1MHz 2.9 pF DS GS Noise Figure NF V =5V, R =1k, I =1mA, f=1kHz 1.0 dB DS g D * : The 2SK3557 is classi ed by I as follows : (unit : mA) DSS Rank 6 7 I 10.0 to 20.0 16.0 to 32.0 DSS Ordering Information Device Package Shipping memo 2SK3557-6-TB-E CP 3,000pcs./reel Pb Free 2SK3557-7-TB-E CP 3,000pcs./reel I -- V I -- V D DS D DS 20 20 16 16 12 12 8 8 4 4 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 24 68 10 12 Drain-to-Source Voltage, V -- V ITR02749 Drain-to-Source Voltage, V -- V ITR02750 DS DS I -- V I -- V D GS D GS 22 16 V =5V V =5V DS DS 20 I =15mA DSS 14 18 12 16 14 10 12 8 10 6 8 6 4 4 2 2 0 0 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 Gate-to-Source Voltage, V -- V IT04224 Gate-to-Source Voltage, V -- V ITR02752 GS GS No.7169-2/6 --0.5V --0.5V --0.6V --0.6V --0.7V --0.3V --0.3V --0.4V --0.7V --0.2V --0.4V --0.2V --0.1V V =0 GS --0.1V V =0 GS I =30mA DSS 25C 15mA Ta=--25C 20mA 10mA 75C Drain Current, I -- mA Drain Current, I -- mA D D Drain Current, I -- mA Drain Current, I -- mA D D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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