CE3520K3 CEL

DATASHEET RF Low Noise FET CE3520K3 20 / 24 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION PACKAGE Super Low Noise and High Gain Micro-X plastic package Hollow (Air cavity) Plastic package FEATURES Super Low noise figure and high associated gain: NF = 0.55 dB TYP., Ga = 13.8 dB TYP. V = 2 V, I = 10 mA, f = 20 GHz DS D NF = 0.80 dB TYP., Ga = 13.9 dB TYP. VDS = 2 V, ID = 10 mA, f = 24 GHz APPLICATIONS K-Band LNB (Low Noise Block) Doppler Sensor Low Noise Amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number Package Marking Description CE3520K3 CE3520K3-C1 Micro-X plastic C6 Embossed tape 8 mm wide package Pin 4 (Gate) faces the perforation side of the tape MOQ 10k pcs/reel This document is subject to change without notice. Date Published: July 2019 CDS-0019-04 (Issue C) 1 CE3520K3 PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1 Source 2 Drain 3 Source 4 Gate ABSOLUTE MAXIMUM RATINGS A (T = +25C, unless otherwise specified) Parameter Symbol Rating Unit V Drain to Source Voltage 4.0 V DS Gate to Source Voltage V -3.0 V GS Drain Current I I mA D DSS Gate Current IG 80 A P Total Power Dissipation 125 mW tot Channel Temperature T +150 C ch Storage Temperature T -55 to +125 C stg Note C Operation Temperature T -55 to +125 op Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 RECOMMENDED OPERATING RANGE (TA = +25C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage V +1 +2 +3 V DS Drain Current ID 5 10 15 mA This document is subject to change without notice. 2