Package Type: 440117, 440133 PN: CGHV14500 CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Crees CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Typical Performance Over 1.2-1.4 GHz (T = 25C) of Demonstration Amplifier C Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 545 540 530 530 530 W Gain 16.4 16.3 16.2 16.2 16.2 dB Drain Efficiency 69 69 68 66 65 % Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 s pulse width, 10% duty cycle, P = 41 dBm. IN Features Reference design amplifier 1.2 - 1.4 GHz Operation FET tuning range UHF through 1800 MHz 530 W Typical Output Power 16 dB Power Gain 68% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally pre-matched on input, unmatched output Subject to change without notice. 1 www.cree.com/rf Rev 3.1 July 2015Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 84 mA 25C GMAX 1 Maximum Drain Current I 36 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 CW Thermal Resistance, Junction to Case R 0.47 C/W P = 334 W, 65C JC DISS 3 Pulsed Thermal Resistance, Junction to Case R 0.28 C/W P = 334 W, 500 sec, 10%, 85C JC DISS 4 Pulsed Thermal Resistance, Junction to Case R 0.31 C/W P = 334 W, 500 sec, 10%, 85C JC DISS 5 Case Operating Temperature T -40, +130 C P = 334 W, 500 sec, 10% C DISS Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at