CGHV14800 800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Description Crees CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 960 - 1400 MHz pulsed L-Band radar amplifier applications, such as air Package Type: 440117 traffic control (ATC) radar, weather radar, penetration radars, antimissile PN: CGHV14800F system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically delivering > 65% drain efficiency. The package options are ceramic/metal flange package. Typical Performance Over 1.2 - 1.4 GHz (TC = 25C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 1000 940 940 920 910 W Gain 15.5 15.2 15.2 15.1 15.1 dB Drain Efficiency 74 73 73 69 67 % Note: Measured in the CGHV14800F-AMP amplifier circuit, under 100 secs pulse width, 5% duty cycle, PIN = 41 dBm. Features Reference design amplifier 1.2 - 1.4 GHz Operation 70% Typical Drain Efficiency 910 W Typical Output Power <0.3 dB Pulsed Amplitude Droop 14 dB Power Gain Internally input and output matched Large Signal Models Available for ADS and MWO Rev 2.3 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV14800 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 132 mA 25C GMAX 1 Maximum DC Current I 24 A 25C DMAX Maximum Duty Cycle D 5 % 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Pulsed Thermal Resistance, Junction to Case R 0.16 C/W P = 664 W, 100 sec, 5%, 85C JC DISS 4 Case Operating Temperature T -40, +100 C P = 664 W, 100 sec, 5% C DISS 3 Notes: Measured for the CGHV14800F-AMP 1 4 Current limit for long term, reliable operation See also, the Power Dissipation De-rating Curve on Page 6 2 Refer to the Application Note on soldering at www.wolfspeed.com/rf/document-library Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 132.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 800 mA GS(Q) DC DS D 2 Saturated Drain Current I 86.3 123.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 132.8 mA BR DC GS D 3 RF Characteristics (T = 25C, F = 1.3 GHz unless otherwise noted) C 0 Output Power P 804 977 W V = 50 V, I = 800 mA, F = 1.2 GHz, P = 44.5 dBm OUT DD DQ IN Drain Efficiency D 62 71 % V = 50 V, I = 800 mA, F = 1.2 GHz, P = 44.5 dBm E DD DQ IN Output Power P 795 933 W V = 50 V, I = 800 mA, F = 1.23 GHz, P = 44.5 dBm OUT DD DQ IN Drain Efficiency D 63 71 % V = 50 V, I = 800 mA, F = 1.23 GHz, P = 44.5 dBm E DD DQ IN Output Power P 750 912 W V = 50 V, I = 800 mA, F = 1.4 GHz, P = 44.5 dBm OUT DD DQ IN Drain Efficiency D 57 67 % V = 50 V, I = 800 mA, F = 1.4 GHz, P = 44.5 dBm E DD DQ IN Pulsed Amplitude Droop D -0.3 dB V = 50 V, I = 800 mA DD DQ No damage at all phase angles, V = 50 V, I = 800 Output Mismatch Stress VSWR 9 : 1 Y DD DQ mA, P = 44.5 dBm Pulsed IN Dynamic Characteristics Input Capacitance C 326 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 643 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 3.9 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV14800F-AMP. Pulsed Width = 100 S, Duty Cycle = 5%. Rev 2.3 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com