Package Type: 3x4 DFN
PN: CGHV27030S
CGHV27030S
30 W, DC - 6.0 GHz, GaN HEMT
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)
which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN
HEMT devices are ideal for telecommunications applications with frequencies of 700-960
MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V
and 28 V operations. The CGHV27030S is also ideal for tactical communications applications
operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band
RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a
3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
Typical Performance 2.5-2.7 GHz (T = 25C) , 50 V
C
Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units
Small Signal Gain 22.5 22.0 21.4 dB
Adjacent Channel Power @ P =5 W -34.5 -35.0 -34.0 dBc
OUT
Drain Efficiency @ P = 5 W 28.5 29.5 30.0 %
OUT
Input Return Loss 8.5 14 14 dB
Note:
Measured in the CGHV27030S-AMP1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
Features for 50 V in CGHV27030S-AMP1
2.5 - 2.7 GHz Operation
30 W Typical Output Power
20 dB Gain at 5 W P
AVE
-34 dBc ACLR at 5 W P
AVE
30% efficiency at 5 W P
AVE
High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit Operating Frequency Amplifier Class Operating Voltage
CGHV27030S-AMP1 2.5 - 2.7 GHz Class A/B 50 V
CGHV27030S-AMP2 2.5 - 2.7 GHz Class A/B 28 V
CGHV27030S-AMP3 1.8 - 2.2 GHz Class A/B 28 V
CGHV27030S-AMP4 1.8 - 2.2 GHz Class A/B 50 V
CGHV27030S-AMP5 1.2 - 1.4 GHz Class A/B 50 V
Subject to change without notice.
1
www.cree.com/RF
Rev 4.1 May 2017Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Notes
Drain-Source Voltage V 125 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 4 mA 25C
GMAX
1
Maximum Drain Current I 1.5 A 25C
DMAX
2
Soldering Temperature T 245 C
S
3
Case Operating Temperature T -40, +150 C
C
4
Thermal Resistance, Junction to Case R 6.18 C/W 85C
JC
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/rf/document-library
3
T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
C
resistance. See also, the Power Dissipation De-rating Curve on page 23.
4
Measured for the CGHV27030S at P = 12 W
DISS
5
The R for Crees demonstration amplifier, CGHV27030S-AMP1, with 33 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9C. The total
TH
R from the heat sink to the junction is 6.18C + 3.9C = 10.08C/W.
TH
Electrical Characteristics (T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 4 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 50 V, I = 0.13 mA
GS(Q) DC DS D
Saturated Drain Current I 3.0 3.6 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 4 mA
(BR)DSS DC GS D
2,3
RF Characteristics (T = 25C, F = 2.65 GHz unless otherwise noted)
C 0
Gain G 19 21.3 - dB V = 50 V, I = 0.13 A, P = 10 dBm
DD DQ IN
4
Output Power P 43 44 dBm V = 50 V, I = 0.13 A, P = 28 dBm
OUT DD DQ IN
4
Drain Efficiency 48 60 - % V = 50 V, I = 0.13 A, P = 28 dBm
DD DQ IN
No damage at all phase angles,
4
Output Mismatch Stress VSWR - 10 : 1 - Y
V = 50 V, I = 0.13 A, P = 28 dBm
DD DQ IN
Dynamic Characteristics
5
Input Capacitance C 5.38 pF V = 50 V, V = -8 V, f = 1 MHz
GS DS gs
5
Output Capacitance C 1.18 pF V = 50 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 0.12 pF V = 50 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging
2
Scaled from PCM data
3
Measured in Crees production test fixture. This fixture is designed for high volume test at 2.65 GHz
4
Un-modulated Pulsed Signal 100 s, 10% duty cycle
5
Includes package parasitics.
Cree, Inc.
4600 Silicon Drive
Copyright 2013 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
www.cree.com/rf
2
CGHV27030S Rev 4.1